Allicdata Part #: | 497-11868-5-ND |
Manufacturer Part#: |
STF24NM60N |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 17A TO-220FP |
More Detail: | N-Channel 600V 17A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF24NM60N Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.01430 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STF24NM60N belongs to a series of power metal oxide semiconductor field effect transistors (MOSFETs) developed by STMicroelectronics. It is a single N-channel MOSFET with a maximum drain source breakdown voltage of approximately 600V. Due to its low on-resistance and high current capacity, it is widely used for different power management applications.
The STF24NM60N features an 8.9mm maximum gate-source voltage (Vgs) and an ESD rating of up to 8kV HBM. It is available in a TO-220 package, making it an ideal choice for high-power motor drives and other power management applications.
It is worth noting that this MOSFET is designed with a wide range of operational temperature ranging from -55°C to 175°C. Besides, STF24NM60N also has a maximum junction temperature of 175°C, which makes it a great choice for operating in harsh environments.
In terms of real-world applications, STF24NM60N can be used in DC-DC converters, inverters and switching power supplies. Additionally, it can also be utilized in a variety of other power management and automotive applications, such as fuel pumps, HVAC systems, and battery chargers.
The working principle of STF24NM60N is based on the flow of charge between the drain and source terminals when a voltage is applied to the gate terminal, allowing current to flow from the source to the drain. The MOSFET is highly efficient in terms of energy as it allows current to flow through the channel even when a small voltage is applied to the gate terminal. As a result, it is able to deliver high power density in a very small package.
The STF24NM60N also features high surge capability and very low gate charge for improved switching performance. These features make it an ideal choice for high-speed switching, making it suitable for a variety of applications that require high power density. Additionally, the MOSFET has a low parasitic inductance, making it ideal for use in high-frequency resonant converters.
To sum up, the STF24NM60N is a high-performance, single N-channel MOSFET with a wide range of operating temperature and high surge capability. It is suitable for high-power motor drive applications, DC-DC converters, inverters, and other power management and automotive applications. In addition, it has a low gate charge and low parasitic inductance, making it an ideal choice for high-frequency resonant converters.
The specific data is subject to PDF, and the above content is for reference
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