STF21NM60ND Allicdata Electronics
Allicdata Part #:

497-11885-5-ND

Manufacturer Part#:

STF21NM60ND

Price: $ 4.56
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 17A TO-220FP
More Detail: N-Channel 600V 17A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STF21NM60ND datasheetSTF21NM60ND Datasheet/PDF
Quantity: 1261
1 +: $ 4.56120
10 +: $ 4.42436
100 +: $ 4.33314
1000 +: $ 4.24192
10000 +: $ 4.10508
Stock 1261Can Ship Immediately
$ 4.56
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF21NM60ND is a power MOSFET specifically designed for high current switching applications. It is well suited for use as a switch in power supplies and other power switching circuits. The device has a maximum drain source voltage of 600V and a continuous drain current rating of 21A. The STF21NM60ND has a low on-state resistance making it well suited for high-efficiency switching applications. The STF21NM60ND is an N-channel enhancement mode field effect transistor (FET). It uses a thin layer of gate oxide and an insulated gate electrode to regulate the flow of current. The current flow between the drain and the source is controlled by the electric field in the channel which is modulated by the gate voltage. The FET has two operating modes, enhancement mode and depletion mode. In enhancement mode, the transistor is on when the gate voltage is increased above a certain threshold. The source and drain terminals are positively charged, which results in minority carriers being injected into the channel. This causes the transistor to conduct. In depletion mode, the source and drain terminals are negatively charged, which results in majority carriers being drawn away from the channel. This causes the transistor to switch off. The STF21NM60ND is an enhancement mode FET, meaning that it can be turned on by applying a positive voltage to the gate. When the gate voltage is increased above a certain threshold, the transistor will begin to conduct current. This device is well suited for high switching frequencies, as it has a fast switching speed and high switching efficiency. It also has excellent power handling capabilities and can handle high voltages. The STF21NM60ND is generally used in switching applications such as high-current power supplies and other power switching circuits. It is also used in motor control and PWM circuits. Due to its high switching efficiency and fast switching speed, the device is well suited for high-frequency applications, such as switching between multiple power sources. The STF21NM60ND is a versatile and powerful MOSFET, which makes it suitable for a wide range of switching applications. It has a low on-state resistance, making it well suited for high-efficiency switching applications. It also has excellent power handling capabilities, making it suitable for high-voltage and high-current applications.

The specific data is subject to PDF, and the above content is for reference

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