| Allicdata Part #: | 497-15270-5-ND |
| Manufacturer Part#: |
STF24N65M2 |
| Price: | $ 2.47 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 16A TO220FP |
| More Detail: | N-Channel 650V 16A (Tc) 30W (Tc) Through Hole TO-2... |
| DataSheet: | STF24N65M2 Datasheet/PDF |
| Quantity: | 6 |
| 1 +: | $ 2.47000 |
| 10 +: | $ 2.39590 |
| 100 +: | $ 2.34650 |
| 1000 +: | $ 2.29710 |
| 10000 +: | $ 2.22300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | MDmesh™ M2 |
| Rds On (Max) @ Id, Vgs: | 230 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STF24N65M2 is a field effect transistor (FET) used in a variety of electronic devices. FETs are used to control the flow of electricity in a circuit, enabling an electrical signal to be amplified or used to switch circuit components on and off. The STF24N65M2 is a MOSFET, or metal-oxide-semiconductor field effect transistor, which combines the properties of transistors and insulated-gate technology to provide a transistor that can switch higher power at lower voltages than traditional transistors.
The STF24N65M2 is a single-channel FET, meaning that it has a single control input that is used to control the induced channel in the device. The FET has a drain-source voltage of +- 24 volts, a drain current of 65 amps and a maximum power dissipation of 200 watts. The STF24N65M2 is a low-on-resistance, high-current device suitable for use in high-power switched applications, such as motor drives, power supplies and power amplifiers.
The STF24N65M2 is a depletion mode FET, meaning that its source-drain current is always on. Its gate-source voltage must be driven to a negative voltage in order to turn it “off”. FETs of this type are common in switching power devices because of their low-resistance and high-power capabilities.
When a positive voltage is applied to the gate of the STF24N65M2, it induces a channel between the drain and source, allowing current to flow in an N-channel MOSFET. This causes the MOSFET to act as an amplifier or switch, depending on the particular application. As the voltage at the gate increases, the current flow in the channel will also increase, allowing the device to be used in high-power applications.
When a negative voltage is applied to the gate of the STF24N65M2, it will create a depletion region in the FET’s channel, preventing current flow. This allows the FET to be used as a switch for applications that require very low power consumption.
The STF24N65M2 has a wide range of applications in the electronics industry. It is used in variable-voltage power supplies, automotive and industrial motor controllers, and power amplifiers. It can also be used for high-power switching applications and low-power switching applications.
The STF24N65M2 is a MOSFET that combines the advantages of transistors and insulated-gate technology, enabling it to switch higher power at lower voltages than traditional transistors. It is a single-channel device with a low-on-resistance and high-current capability that can be used in a variety of applications in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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STF24N65M2 Datasheet/PDF