STFI10NK60Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STFI 10NK60Z Application Field and Working Principle

The STFI 10NK60Z is a N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) manufactured using STMicroelectronics\' advanced CSTB65SP process. It is intended for use in electronic equipment requiring high performance power switching applications.

Applications

The STFI 10NK60Z is suitable for a number of power switching applications such as high efficiency DC-DC conversion, high power motor drives, adjustable speed drives, AC switches and other power switching applications. It is particularly suited for applications where low on-resistance and small package size are important. Additionally, the STFI 10NK60Z\'s excellent switching performance, low on-resistance, high dV/dt, and low losses make it a great choice for applications such as servers, computing and other power constrained applications.

Working Principle

The STFI 10NK60Z is an enhancement-mode MOSFET with an N-channel silicon region. The operation of the device relies on a structure in which the current flows between the source and the drain regions via a conductive channel which is induced below the gate region. This is where P-type and N-type dopants are strategically placed to achieve the desired current flow.

When a small positive voltage is applied to the gate of the transistor, a voltage drop is created which induces a conducting channel between the source and drain regions. This allows current to flow between the source and drain regions with minimal resistance. As a result, the voltage drop across the transistor is very low and current flow is increased. The size of the voltage drop is determined by the Gate-to-Source Voltage (Vgs) of the transistor.

At higher voltages the conducting channel will become saturated and the current will not increase further. This is known as the saturation region or avalanche breakdown. In this region the current flowing between the source and drain regions is determined by the Gate-to-Source voltage (Vgs) and the Drain-to-Source voltage (Vds) of the transistor.

When the Gate-to-Source Voltage (Vgs) is reduced, the conducting channel becomes increasingly resistive, which causes the current flow to eventually cease. This is known as the cutoff region and it is the point at which the transistor is no longer allowing current to flow between its source and drain regions.

Conclusion

The STFI 10NK60Z is an N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) which is great for a number of power switching applications. Its low on-resistance, high dV/dt and low losses make it an ideal choice for applications such as servers and computing. Its operation relies on the induced conductive channel between the source and drain which is created when a small positive voltage is applied to the gate.

Furthermore, in order to adjust the current flow, the Gate-to-Source Voltage (Vgs) must be adjusted. As the voltage is increased, the channel will become saturated and the current will not increase further. On the other hand, when the voltage is decreased, the channel becomes increasingly resistive, eventually reaching the cutoff region and ceasing current flow.

The specific data is subject to PDF, and the above content is for reference