Cap film 2400pf 3% 1.6kvdc rad - Allicdata Electronics

Related Categories

1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
497-6197-3-ND	STQ1NK80ZR-AP	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.1986
497-13784-3-ND	STQ1HN60K3-AP	STMicroelectronics	View more Series: SuperMESH3 Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	2000 Order	2000+: $0.208
497-12345-3-ND	STQ2NK60ZR-AP	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	4056 Order	2000+: $0.1912
497-10969-3-ND	STQ3N45K3-AP	STMicroelectronics	View more Series: SuperMESH3 Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.2196
497-12343-3-ND	STQ1NK60ZR-AP	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	8000 Order	2000+: $0.1303
497-12344-3-ND	STQ2HNK60ZR-AP	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	8000 Order	--
497-13391-3-ND	STQ2LN60K3-AP	STMicroelectronics	View more Series: SuperMESH3 Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	6000+: $0.1329
497-15648-3-ND	STQ1HNK60R-AP	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	20 Order	2000+: $0.1449
IRFP048PBF-ND	IRFP048PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	797 Order	--
SPP20N60CFDHKSA 1-ND	SPP20N60CFDHKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
497-8455-5-ND	STW25NM60ND	STMicroelectronics	View more Series: FDmesh II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Power Dissipation (Max): 160W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1453 Order	1+: $6.2748 30+: $5.1463 120+: $4.6442 510+: $3.8911
IRFP048RPBF-ND	IRFP048RPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	500+: $2.1877
IRFIZ48G-ND	IRFIZ48G	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	1000 Order	--
IRFIZ48GPBF-ND	IRFIZ48GPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	840 Order	--
497-5025-5-ND	STW25NM60N	STMicroelectronics	View more Series: MDmesh II Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Power Dissipation (Max): 160W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $0
SPP21N50C3XKSA1 -ND	SPP21N50C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $2.898 10+: $2.5849 100+: $2.1199 500+: $1.7166 1000+: $1.4477
SPP21N50C3HKSA1 -ND	SPP21N50C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IRFZ48L-ND	IRFZ48L	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
SPB20N60C3ATMA1 TR-ND	SPB20N60C3ATMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $1.8034
SPP20N60C3IN-ND	SPP20N60C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
SPP20N60C3XKSA1 -ND	SPP20N60C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	--
IPI90R340C3XKSA 1-ND	IPI90R340C3XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $2.712
SPI20N65C3XKSA1 -ND	SPI20N65C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
SPI21N50C3XKSA1 -ND	SPI21N50C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $1.7166
SPW21N50C3FKSA1 -ND	SPW21N50C3FKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	447 Order	1+: $3.402 10+: $3.0398 240+: $2.4924 720+: $2.0182 1200+: $1.7021
IPD060N03LGATMA 1TR-ND	IPD060N03LGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Power Dissipation (Max): 56W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2352
SPA20N65C3XKSA1 -ND	SPA20N65C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 34.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3 Full Pack	1000 Order	500+: $2.3477
SPP20N60CFDXKSA 1-ND	SPP20N60CFDXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	500+: $2.2096
IPW90R340C3FKSA 1-ND	IPW90R340C3FKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $4.6998 10+: $4.2305 240+: $3.4785 720+: $2.9145 1200+: $2.5384
IPU060N03LGIN-N D	IPU060N03L G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Power Dissipation (Max): 56W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
SPI21N50C3HKSA1 -ND	SPI21N50C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
SPB21N50C3ATMA1 TR-ND	SPB21N50C3ATMA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $1.4517
SPP20N65C3XKSA1 -ND	SPP20N65C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1007 Order	1+: $3.9627 10+: $3.5356 100+: $2.8993 500+: $2.3477 1000+: $1.98
IPP90R340C3XKSA 1-ND	IPP90R340C3XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $4.5738 50+: $3.6759 100+: $3.3492 500+: $2.712 1000+: $2.2872
SPP20N65C3HKSA1 -ND	SPP20N65C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IPS060N03LGBKMA 1-ND	IPS060N03LGBKMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Power Dissipation (Max): 56W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
IPS060N03LGAKMA 1-ND	IPS060N03LGAKMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Power Dissipation (Max): 56W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
IPP065N03LGXKSA 1-ND	IPP065N03LGXKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Power Dissipation (Max): 56W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	54 Order	1+: $0.8001 10+: $0.7119
SPI20N60C3XKSA1 -ND	SPI20N60C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
SPI20N60C3HKSA1 -ND	SPI20N60C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0

1 2 3 4 5 >

Hot Searches: cap film 2400pf 3% 1.6kvdc rad cap film 2400pf 5% 1.6kvdc rad cap film 2400pf 3.5% 1.6kvdc rad cap film 2400pf 3% 1.25kvdc rad cap film 4700pf 3% 1.6kvdc rad cap film 3300pf 3% 1.6kvdc rad cap film 6200pf 3% 1.6kvdc rad cap film 10000pf 3% 1.6kvdc rad cap film 1200pf 3% 1.6kvdc rad cap film 1300pf 3% 1.6kvdc rad cap film 3000pf 3% 1.6kvdc rad cap film 3600pf 3% 1.6kvdc rad cap film 1800pf 3% 1.6kvdc rad cap film 3900pf 3% 1.6kvdc rad cap film 5600pf 3% 1.6kvdc rad cap film 1500pf 3% 1.6kvdc rad cap film 1600pf 3% 1.6kvdc rad cap film 2200pf 3% 1.6kvdc rad cap film 5100pf 3% 1.6kvdc rad cap film 4300pf 3% 1.6kvdc rad

Search Result:cap film 2400pf 3% 1.6kvdc rad

Related Categories