| Allicdata Part #: | IRFIZ48GPBF-ND |
| Manufacturer Part#: |
IRFIZ48GPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 37A TO220FP |
| More Detail: | N-Channel 60V 37A (Tc) 50W (Tc) Through Hole TO-22... |
| DataSheet: |  IRFIZ48GPBF Datasheet/PDF |
| Quantity: | 840 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 18 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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Application Fields of IRFIZ48GPBF
IRFIZ48GPBF is typically used in typical applications such as consumer electronic devices, audio amplifiers and other audio equipment, cell phones and other mobile consumer electronic devices, switching power supplies, and various industrial and automotive applications. In addition, this device can be used for battery-powered equipment and can be found in various industrial, commercial and consumer applications.
Due to its high performance, and power efficiency, IRFIZ48GPBF can be used in many situations where more power is required, such as industrial and automotive applications. Some of the industrial applications where the IRFIZ48GPBF can be used include motor drives, drivers, power supplies, and power management systems. In the automotive world, the device can be used in DC-DC converters and motor control applications.
In addition, this device also offers improved performance as compared to other traditional FETs and is used in many high frequency applications such as radar and satellite systems, low noise amplifiers, and medical instrumentations.
Working Principle of IRFIZ48GPBF
The working principle of IRFIZ48GPBF lies in the fact that it is an insulated-gate field effect transistor (IGFET). The IGFET uses an insulated gate to control the current flow between the transistor’s source and drain terminals. This control is done by changing the voltage applied to the gate. A higher voltage applied to the gate will cause more current to flow between the source and drain, while a lower voltage will cause less current to flow.
The unit has a low on-resistance of only 8.2 mΩ and its low threshold voltage (VT) of 3.2V allows it to operate at a lower voltage while still providing the same output current. The internal Schottky diode prevents reverse current and provides reverse blocking characteristics.
At the same time, the low on-resistance of the IRFIZ48GPBF also helps to reduce power dissipation as compared to traditional FETs. This in turn helps to increase the overall power efficiency of the device.
Conclusion
IRFIZ48GPBF is an advanced MOSFET from Infineon. It is a p-channel, silicon-gate MOSFET with improved performance and power efficiency when compared to traditional FETs. It is applicable for a wide range of applications, including consumer electronics, automotive, industrial, and communication applications. The low on-resistance and low threshold voltage of the device help to reduce its power dissipation and make it ideal for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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