Contact Us:00852-30501886 Email:sales@allicdata.com
Sitemap How to buy Login / Register
USD
USA EN
Cart(0)
Products Manufacturers Authorized Agent Send RFQ Blog（news） About us
Home> Products>

Search Result:chip resistor

 --1504 Item(s) In Category:Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Related Categories

Resistors
Through Hole Resistors
Resistor Networks, Arrays
Chassis Mount Resistors
Specialized Resistors
Accessories
Chip Resistor - Surface Mount
Optoelectronics
LED Lighting - COBs, Engines, ...
LED Indication - Discrete
LED Lighting - White
Infrared, UV, Visible Emitters
LEDs - Circuit Board Indicator...
Discrete Semiconductor Products
Transistors - Bipolar (BJT) - ...
Transistors - Bipolar (BJT) - ...
Diodes - Rectifiers - Single
Diodes - Bridge Rectifiers
Diodes - RF
Transistors - IGBTs - Single
Transistors - Bipolar (BJT) - ...
Thyristors - SCRs
Integrated Circuits (ICs)
Embedded - DSP (Digital Signal...
Embedded - System On Chip (SoC...
PMIC - Power Management - Spec...
Interface - Specialized
Interface - Telecom
Clock/Timing - Real Time Clock...
Specialized ICs
Clock/Timing - Application Spe...
Embedded - Microcontrollers - ...
Embedded - Microcontroller, Mi...
Interface - Controllers
Embedded - Microcontrollers
Memory - Controllers
PMIC - Full, Half-Bridge Drive...
Clock/Timing - Clock Generator...
Linear - Amplifiers - Special ...
Interface - Drivers, Receivers...
Embedded - FPGAs (Field Progra...
Soldering, Desoldering, Rework P...
Soldering, Desoldering, Rework...
Solder Stencils, Templates
Solder
Dispensers, Dispenser Tips
Accessories
Flux, Flux Remover
Potentiometers, Variable Resisto...
Adjustable Power Resistor
Trimmer Potentiometers
Prototyping, Fabrication Product...
Adapter, Breakout Boards
Prototype Boards Perforated
Power Supplies - Board Mount
DC DC Converters
Accessories
RF/IF and RFID
RF Transceiver Modules
RF Antennas
RF Accessories
RF Receivers
Attenuators
RF Amplifiers
RF Misc ICs and Modules
Balun
RF Transmitters
RF Evaluation and Development ...
RFID, RF Access, Monitoring IC...
RF Transceiver ICs
Connectors, Interconnects
Power Entry Connectors - Inlet...
Sockets for ICs, Transistors -...
Terminal Junction Systems
Terminal Blocks - Din Rail, Ch...
Rectangular Connectors - Heade...
Circular Connectors - Accessor...
Sockets for ICs, Transistors
Rectangular Connectors - Heade...
Kits
Resistor Kits
EMI, Filter Kits
Inductor Kits
Uncategorized
Miscellaneous
Development Boards, Kits, Progra...
Evaluation Boards - DC/DC &...
Evaluation and Demonstration B...
Filters
Ferrite Beads and Chips
Relays
Automotive Relays
Power Relays, Over 2 Amps
Sensors, Transducers
Optical Sensors - Photointerru...
Optical Sensors - Photodiodes
Image Sensors, Camera
Optical Sensors - Photointerru...
Temperature Sensors - NTC Ther...
Motors, Solenoids, Driver Boards...
Accessories
Circuit Protection
Fuses
Accessories
Test and Measurement
Equipment - Specialty
Accessories
Industrial Controls
Time Delay Relays
Accessories
Protection Relays & System...
Power Supplies - External/Intern...
DC DC Converters
Capacitors
Silicon Capacitors
Tools
Crimpers, Applicators, Presses...
Fans, Thermal Management
Thermal - Heat Sinks
Line Protection, Distribution, B...
Power Distribution, Surge Prot...
Transformers
Pulse Transformers
Switches
Thumbwheel Switches
Audio Products
Alarms, Buzzers, and Sirens
Hardware, Fasteners, Accessories
Component Insulators, Mounts, ...
Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
RN2967(TE85L,F) RN2967(TE85LF)T
R-ND		 RN2967(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN2967(TE85LF)TR-ND Datasheet
RN2969(TE85L,F) RN2969(TE85LF)T
R-ND		 RN2969(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN2969(TE85LF)TR-ND Datasheet
RN2971(TE85L,F) RN2971(TE85LF)T
R-ND		 RN2971(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN2971(TE85LF)TR-ND Datasheet
RN4611(TE85L,F) RN4611(TE85LF)T
R-ND		 RN4611(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
3000
Order

3000+:

$0.0556

 RN4611(TE85LF)TR-ND Datasheet
PUMH20,115 1727-1744-2-ND PUMH20,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0397

6000+:

$0.0345

15000+:

$0.0293

30000+:

$0.0276

75000+:

$0.0259

 1727-1744-2-ND Datasheet
PUMB13,115 1727-1734-2-ND PUMB13,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0432

6000+:

$0.0376

15000+:

$0.0319

30000+:

$0.0301

75000+:

$0.0282

 1727-1734-2-ND Datasheet
RN1604(TE85L,F) RN1604(TE85LF)T
R-ND		 RN1604(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1604(TE85LF)TR-ND Datasheet
RN2906FE(TE85L,F) RN2906FE(TE85LF
)TR-ND		 RN2906FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2906FE(TE85LF)TR-ND Datasheet
RN2911FE(TE85L,F) RN2911FE(TE85LF
)TR-ND		 RN2911FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2911FE(TE85LF)TR-ND Datasheet
RN1909FE(TE85L,F) RN1909FE(TE85LF
)TR-ND		 RN1909FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1909FE(TE85LF)TR-ND Datasheet
RN2901FE(TE85L,F) RN2901FE(TE85LF
)TR-ND		 RN2901FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2901FE(TE85LF)TR-ND Datasheet
RN1905(T5L,F,T) RN1905(T5LFT)TR
-ND		 RN1905(T5L,F,T) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
1000
Order

1+:

$0

 RN1905(T5LFT)TR-ND Datasheet
RN1910FE(T5L,F,T) RN1910FE(T5LFT)
TR-ND		 RN1910FE(T5L,F,
T)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1910FE(T5LFT)TR-ND Datasheet
RN1963FE(TE85L,F) RN1963FE(TE85LF
)TR-ND		 RN1963FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1963FE(TE85LF)TR-ND Datasheet
XN0111000L XN0111000LTR-ND XN0111000L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0111000LTR-ND Datasheet
XN0111600L XN0111600LTR-ND XN0111600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0111600LTR-ND Datasheet
XN0411100L XN0411100LTR-ND XN0411100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: MINI6-G1
1000
Order

1+:

$0

 XN0411100LTR-ND Datasheet
XP0411500L XP0411500LTR-ND XP0411500L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

1+:

$0

 XP0411500LTR-ND Datasheet
XP0121600L XP0121600LTR-ND XP0121600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 5-TSSOP, SC-70-5, SOT-353
 Supplier Device Package: SMini5-G1
1000
Order

1+:

$0

 XP0121600LTR-ND Datasheet
RN2704JE(TE85L,F) RN2704JE(TE85LF
)TR-ND		 RN2704JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2704JE(TE85LF)TR-ND Datasheet
RN2705JE(TE85L,F) RN2705JE(TE85LF
)TR-ND		 RN2705JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2705JE(TE85LF)TR-ND Datasheet
RN2701JE(TE85L,F) RN2701JE(TE85LF
)TR-ND		 RN2701JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2701JE(TE85LF)TR-ND Datasheet
RN2710JE(TE85L,F) RN2710JE(TE85LF
)TR-ND		 RN2710JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2710JE(TE85LF)TR-ND Datasheet
RN2707JE(TE85L,F) RN2707JE(TE85LF
)TR-ND		 RN2707JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2707JE(TE85LF)TR-ND Datasheet
RN2708JE(TE85L,F) RN2708JE(TE85LF
)TR-ND		 RN2708JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2708JE(TE85LF)TR-ND Datasheet
RN2608(TE85L,F) RN2608(TE85LF)T
R-ND		 RN2608(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2608(TE85LF)TR-ND Datasheet
RN1609(TE85L,F) RN1609(TE85LF)T
R-ND		 RN1609(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1609(TE85LF)TR-ND Datasheet
RN2610(TE85L,F) RN2610(TE85LF)T
R-ND		 RN2610(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2610(TE85LF)TR-ND Datasheet
RN1608(TE85L,F) RN1608(TE85LF)T
R-ND		 RN1608(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1608(TE85LF)TR-ND Datasheet
RN2602(TE85L,F) RN2602(TE85LF)T
R-ND		 RN2602(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2602(TE85LF)TR-ND Datasheet
RN1511(TE85L,F) RN1511(TE85LF)T
R-ND		 RN1511(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMV
1000
Order

1+:

$0

 RN1511(TE85LF)TR-ND Datasheet
RN1601(TE85L,F) RN1601(TE85LF)T
R-ND		 RN1601(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1601(TE85LF)TR-ND Datasheet
RN2605(TE85L,F) RN2605(TE85LF)T
R-ND		 RN2605(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2605(TE85LF)TR-ND Datasheet
RN1610(TE85L,F) RN1610(TE85LF)T
R-ND		 RN1610(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1610(TE85LF)TR-ND Datasheet
RN2606(TE85L,F) RN2606(TE85LF)T
R-ND		 RN2606(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2606(TE85LF)TR-ND Datasheet
RN1502(TE85L,F) RN1502(TE85LF)T
R-ND		 RN1502(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMV
1000
Order

1+:

$0

 RN1502(TE85LF)TR-ND Datasheet
RN2607(TE85L,F) RN2607(TE85LF)T
R-ND		 RN2607(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2607(TE85LF)TR-ND Datasheet
UP0421400L UP0421400LTR-ND UP0421400L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMINI6-F1
1000
Order

1+:

$0

 UP0421400LTR-ND Datasheet
UP0121300L UP0121300LTR-ND UP0121300L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-665
 Supplier Device Package: SSMini5-F2
1000
Order

1+:

$0

 UP0121300LTR-ND Datasheet
UP0411100L UP0411100LTR-ND UP0411100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMINI6-F1
1000
Order

1+:

$0

 UP0411100LTR-ND Datasheet
Hot Searches: chip resistor variable resistor chip voltage controlled resistor chip voltage controlled variable resistor chip resistor voltage resistor resistor voltage constant resistor metal resistor resistor divider resistor calculator variable resistor 1k resistor 10k resistor ballast resistor resistor values shunt resistor resistor in parallel load resistor resistor color