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Search Result:frequency domain filtering

 --1504 Item(s) In Category:Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
RN2967(TE85L,F) RN2967(TE85LF)T
R-ND		 RN2967(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN2967(TE85LF)TR-ND Datasheet
RN2969(TE85L,F) RN2969(TE85LF)T
R-ND		 RN2969(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN2969(TE85LF)TR-ND Datasheet
RN2971(TE85L,F) RN2971(TE85LF)T
R-ND		 RN2971(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN2971(TE85LF)TR-ND Datasheet
RN4611(TE85L,F) RN4611(TE85LF)T
R-ND		 RN4611(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
3000
Order

3000+:

$0.0556

 RN4611(TE85LF)TR-ND Datasheet
PUMH20,115 1727-1744-2-ND PUMH20,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0397

6000+:

$0.0345

15000+:

$0.0293

30000+:

$0.0276

75000+:

$0.0259

 1727-1744-2-ND Datasheet
PUMB13,115 1727-1734-2-ND PUMB13,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0432

6000+:

$0.0376

15000+:

$0.0319

30000+:

$0.0301

75000+:

$0.0282

 1727-1734-2-ND Datasheet
RN1604(TE85L,F) RN1604(TE85LF)T
R-ND		 RN1604(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1604(TE85LF)TR-ND Datasheet
RN2906FE(TE85L,F) RN2906FE(TE85LF
)TR-ND		 RN2906FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2906FE(TE85LF)TR-ND Datasheet
RN2911FE(TE85L,F) RN2911FE(TE85LF
)TR-ND		 RN2911FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2911FE(TE85LF)TR-ND Datasheet
RN1909FE(TE85L,F) RN1909FE(TE85LF
)TR-ND		 RN1909FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1909FE(TE85LF)TR-ND Datasheet
RN2901FE(TE85L,F) RN2901FE(TE85LF
)TR-ND		 RN2901FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2901FE(TE85LF)TR-ND Datasheet
RN1905(T5L,F,T) RN1905(T5LFT)TR
-ND		 RN1905(T5L,F,T) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
1000
Order

1+:

$0

 RN1905(T5LFT)TR-ND Datasheet
RN1910FE(T5L,F,T) RN1910FE(T5LFT)
TR-ND		 RN1910FE(T5L,F,
T)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1910FE(T5LFT)TR-ND Datasheet
RN1963FE(TE85L,F) RN1963FE(TE85LF
)TR-ND		 RN1963FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1963FE(TE85LF)TR-ND Datasheet
XN0111000L XN0111000LTR-ND XN0111000L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0111000LTR-ND Datasheet
XN0111600L XN0111600LTR-ND XN0111600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0111600LTR-ND Datasheet
XN0411100L XN0411100LTR-ND XN0411100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: MINI6-G1
1000
Order

1+:

$0

 XN0411100LTR-ND Datasheet
XP0411500L XP0411500LTR-ND XP0411500L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

1+:

$0

 XP0411500LTR-ND Datasheet
XP0121600L XP0121600LTR-ND XP0121600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 5-TSSOP, SC-70-5, SOT-353
 Supplier Device Package: SMini5-G1
1000
Order

1+:

$0

 XP0121600LTR-ND Datasheet
RN2704JE(TE85L,F) RN2704JE(TE85LF
)TR-ND		 RN2704JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2704JE(TE85LF)TR-ND Datasheet
RN2705JE(TE85L,F) RN2705JE(TE85LF
)TR-ND		 RN2705JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2705JE(TE85LF)TR-ND Datasheet
RN2701JE(TE85L,F) RN2701JE(TE85LF
)TR-ND		 RN2701JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2701JE(TE85LF)TR-ND Datasheet
RN2710JE(TE85L,F) RN2710JE(TE85LF
)TR-ND		 RN2710JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

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 RN2710JE(TE85LF)TR-ND Datasheet
RN2707JE(TE85L,F) RN2707JE(TE85LF
)TR-ND		 RN2707JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

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 RN2707JE(TE85LF)TR-ND Datasheet
RN2708JE(TE85L,F) RN2708JE(TE85LF
)TR-ND		 RN2708JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

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 RN2708JE(TE85LF)TR-ND Datasheet
RN2608(TE85L,F) RN2608(TE85LF)T
R-ND		 RN2608(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2608(TE85LF)TR-ND Datasheet
RN1609(TE85L,F) RN1609(TE85LF)T
R-ND		 RN1609(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1609(TE85LF)TR-ND Datasheet
RN2610(TE85L,F) RN2610(TE85LF)T
R-ND		 RN2610(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2610(TE85LF)TR-ND Datasheet
RN1608(TE85L,F) RN1608(TE85LF)T
R-ND		 RN1608(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1608(TE85LF)TR-ND Datasheet
RN2602(TE85L,F) RN2602(TE85LF)T
R-ND		 RN2602(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2602(TE85LF)TR-ND Datasheet
RN1511(TE85L,F) RN1511(TE85LF)T
R-ND		 RN1511(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMV
1000
Order

1+:

$0

 RN1511(TE85LF)TR-ND Datasheet
RN1601(TE85L,F) RN1601(TE85LF)T
R-ND		 RN1601(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1601(TE85LF)TR-ND Datasheet
RN2605(TE85L,F) RN2605(TE85LF)T
R-ND		 RN2605(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2605(TE85LF)TR-ND Datasheet
RN1610(TE85L,F) RN1610(TE85LF)T
R-ND		 RN1610(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1610(TE85LF)TR-ND Datasheet
RN2606(TE85L,F) RN2606(TE85LF)T
R-ND		 RN2606(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2606(TE85LF)TR-ND Datasheet
RN1502(TE85L,F) RN1502(TE85LF)T
R-ND		 RN1502(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMV
1000
Order

1+:

$0

 RN1502(TE85LF)TR-ND Datasheet
RN2607(TE85L,F) RN2607(TE85LF)T
R-ND		 RN2607(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN2607(TE85LF)TR-ND Datasheet
UP0421400L UP0421400LTR-ND UP0421400L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMINI6-F1
1000
Order

1+:

$0

 UP0421400LTR-ND Datasheet
UP0121300L UP0121300LTR-ND UP0121300L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-665
 Supplier Device Package: SSMini5-F2
1000
Order

1+:

$0

 UP0121300LTR-ND Datasheet
UP0411100L UP0411100LTR-ND UP0411100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMINI6-F1
1000
Order

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 UP0411100LTR-ND Datasheet
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