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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
DN3545N8-GTR-ND	DN3545N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 200mA Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	10000 Order	--
DN2540N8-GTR-ND	DN2540N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 170mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	8000 Order	--
VN2460N3-G-P014 -ND	VN2460N3-G-P014	Microchip Technology	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 160mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.584
DN2540N3-G-P003 -ND	DN2540N3-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.3816
TN2524N8-GTR-ND	TN2524N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	6000 Order	--
TP0620N3-G-ND	TP0620N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	603 Order	--
DN3135K1-GTR-ND	DN3135K1-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25C: 72mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.2544
MCP87050T-U/MFT R-ND	MCP87050T-U/MF	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V Power Dissipation (Max): 2.2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN Base Part Number: MCP87050	1000 Order	3300+: $0.3089
TN5335K1-GTR-ND	TN5335K1-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25C: 110mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 15 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	3000+: $0.3634
TP2640LG-G-ND	TP2640LG-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	3300+: $0.9085
VN0606L-G-P003- ND	VN0606L-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 330mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.584
VN0106N3-G-P003 -ND	VN0106N3-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.3374
LND150N3-G-P003 -ND	LND150N3-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500A, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.2466
VN2410L-G-P014- ND	VN2410L-G-P014	Microchip Technology	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25C: 190mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.4672
LND250K1-GTR-ND	LND250K1-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500A, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.1817
VN2460N8-GTR-ND	VN2460N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	2000 Order	--
TN0106N3-G-P013 -ND	TN0106N3-G-P013	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 500A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.4023
VN0300L-G-P002- ND	VN0300L-G-P002	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.5581
VN0550N3-G-P013 -ND	VN0550N3-G-P013	Microchip Technology	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 50mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.7138
LP0701LG-G-ND	LP0701LG-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16.5V Current - Continuous Drain (Id) @ 25C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	3300+: $0.8825
TN0604N3-G-P013 -ND	TN0604N3-G-P013	Microchip Technology	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	--
576-1327-2-ND	MIC94031YM4-TR	Microchip Technology	View more Series: TinyFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 250A Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V Power Dissipation (Max): 568mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA Base Part Number: MIC94031	1000 Order	1+: $0
DN2535N5-G-ND	DN2535N5-G	Microchip Technology	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	92 Order	1+: $0.819 25+: $0.6814 100+: $0.6269
VN0104N3-G-ND	VN0104N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1232 Order	1+: $0.378 25+: $0.3115 100+: $0.2855
TP0610T-GTR-ND	TP0610T-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	6000 Order	--
DN2450K4-GTR-ND	DN2450K4-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 10 Ohm @ 300mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3089
VP0550N3-G-ND	VP0550N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 54mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	973 Order	--
TN0610N3-G-P003 -ND	TN0610N3-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.5061
576-2938-2-ND	MIC94052YC6-TR	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Vgs (Max): 6V Power Dissipation (Max): 270mW (Ta) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Base Part Number: MIC94052	3000 Order	--
MCP87022T-U/MFT R-ND	MCP87022T-U/MF	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 12.5V Power Dissipation (Max): 2.2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN Base Part Number: MCP87022	1000 Order	3300+: $0.6541
VN2110K1-GTR-ND	VN2110K1-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 360mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.2336
VN10KN3-G-P002T R-ND	VN10KN3-G-P002	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 310mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.2596
VN2222LL-G-P003 -ND	VN2222LL-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.2336
TP2510N8-GTR-ND	TP2510N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 480mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	2000 Order	--
LND150N3-G-P014 -ND	LND150N3-G-P014	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500A, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.2466
VN1206L-G-P002- ND	VN1206L-G-P002	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.7787
DN3535N8-GTR-ND	DN3535N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	4000 Order	2000+: $0.3309
2N6660MC-ND	2N6660	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V Power Dissipation (Max): 6.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	1148 Order	1+: $21.34
TP2540N3-G-ND	TP2540N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	524 Order	1+: $0.8568 25+: $0.7139 100+: $0.6489
VN10KN3-G-P014- ND	VN10KN3-G-P014	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 310mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.2596

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