Allicdata Part #: | SSM6L35FELMTR-ND |
Manufacturer Part#: |
SSM6L35FE,LM |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
More Detail: | Mosfet Array N and P-Channel 20V 180mA, 100mA 150m... |
DataSheet: | SSM6L35FE,LM Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.08727 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 180mA, 100mA |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9.5pF @ 3V |
Power - Max: | 150mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 (1.6x1.6) |
Base Part Number: | SSM6L35 |
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.SSM6L35FE,LM Application Field and Working Principle
The SSM6L35FE,LM are symmetrical FET array transistors from Siliconix. They are dual N-channel depletion mode transistors and operate as a single unit. These transistors are ideal for use in applications requiring low power consumption and low heating. This device provides relatively high impedance and linear current regulation in a low noise environment.
This type of FET array transistor is designed for applications requiring a pair of High Electron Mobility Transistors (HEMTs) with very low power consumption. The SSM6L35FE,LM are ideal for data acquisition and signal processing applications. They provide excellent stability, high frequency operation and linear current regulation while consuming low power.
Working Principle
The SSM6L35FE,LM consists of two N-channel FETs in a symmetrical design. Each FET is separated by a thin dielectric material, ensuring maximum performance and low power consumption. The two FETs can be controlled individually via the gate voltage. The source voltage is the same for both, allowing for a consistent current flow. The drain-to-source resistance is generally quite low. This makes the FET array transistor ideal for use as a switch in a low power application to control the flow of current.
The gate voltage is the key factor in controlling the amount of current flowing through the FET array transistor. When the gate voltage is high, the FETs will be in the “on” state and the drain-to-source resistance will be low. Conversely, when the gate voltage is low, the FETs will be in the “off” state and the drain-to-source resistance will be high. This allows the user to control the flow of current between the drain and the source.
The SSM6L35FE,LM FET array transistors are also designed with low noise operation in mind. The low noise operation is due to the symmetry of the two FETs in the array. When the two FETs are in the same state, their interaction minimizes the noise generated. This makes the SSM6L35FE,LM perfect for use in noise sensitive applications.
Applications
The SSM6L35FE,LM FET array transistors are ideal for use in a wide range of applications. The low power consumption and high frequency operation make them ideal for use in signal processing, data acquisition and audio applications. They are also used in many modern electronics, such as mobile phones, tablets, laptop computers and other portable electronic devices.
The SSM6L35FE,LM are also popular amongst hobbyists and enthusiasts. The low power consumption makes them perfect for use in low voltage and low current applications, such as LED drivers and motor drivers. They are also used in many low noise analog circuits, such as low-noise amplifiers. Additionally, the low noise operation makes them perfect for use in sensitive circuits.
The specific data is subject to PDF, and the above content is for reference
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