Allicdata Part #: | 2N7002DWA-7DITR-ND |
Manufacturer Part#: |
2N7002DWA-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 0.18A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Su... |
DataSheet: | 2N7002DWA-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 180mA |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 25V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors, a three-terminal electrical device, act as a switch or amplifier. FETs and MOSFETs are two types of transistors – the former has a gate capacitor and the latter does not. Among MOSFETs, 2N7002DWA-7 is the latest, superior technology that has numerous applications in the electronics fields. In this article, we will briefly discuss the application fields and working principle of 2N7002DWA-7.
2N7002DWA-7, which is also known as a dual N- Channel Enhancement Mode Field-Effect Transistor Array, have mainly two applications – in high-side and low-side driving. In low-side driving, these transistors are used in automotive equipment, industrial automation, and power management systems. On the other hand, in high-side driving applications, it is used in computers, LCDs, automotive electronics, and industrial control systems. This dual N-channel transistor is mainly used when the control pin needs to be isolated from the power supply due to high electromagnetic interference.
The working principle of 2N7002DWA-7 is based on a certain phenomena – an electric field generated in a two-dimensional gas can influence a current of electrons. It can either allow or disallow the current of electrons according to the voltage between the gate and the drain. When the gate-to-source voltage (VGS) is below the threshold voltage (VTH), it is off and channel is fully depleted. On the other hand, if it is higher than the threshold voltage, it stays on and the channel is full for the current flow.
2N7002DWA-7 is made up of two N-channel enhancement FETs in a single package. It has a low input capacitance and onresistance and also a low threshold voltage range. It has a wide input and output voltage range – from -35V to +35V. It also exhibits good ESD protection, making it suitable for a wide range of applications.
2N7002DWA-7 is an ideal solution for those who require an efficient and economical transistor solution. It is the ideal choice for medium-voltage operations in various industries and applications, ranging from automotive to industrial control. It can also be used for load switching and in motor control systems. It has a wide variety of features and benefits that make it an excellent choice for industrial applications.
Overall, with the wide range of application fields and the efficient working principle, 2N7002DWA-7 can be a great choice for most industrial and automotive applications. It is an excellent choice for medium voltage applications with its low input capacitance, low on-resistance, wide voltage range, and good ESD protection. With its advanced features and benefits, it can easily meet the needs of many industries.
The specific data is subject to PDF, and the above content is for reference
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