2N7002P,235 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1865-2-ND |
Manufacturer Part#: |
2N7002P,235 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 0.36A SOT-23 |
More Detail: | N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount ... |
DataSheet: | 2N7002P,235 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02076 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 360mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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In today’s world, transistors are integral components in most electronics and electrical systems. One type of transistor that is commonly used is the field-effect transistor, commonly referred to as a FET. The 2N7002P,235 is an enhancement-mode MOSFET commonly used in various applications and has different working principles than other transistors.
The 2N7002P,235 is an enhancement-mode MOSFET composed of polysilicon and can be effectively used in small-signal and low-power switching applications. Due to its small size and low voltage requirements, it can also be considered as a surface-mount device, meaning it can be easily installed in areas with limited space.
A FET is a type of transistor, and like other transistors, it acts as a switch allowing electricity to flow through it. Whereas a BJT requires current injection in order to open a switch, a MOSFET has an insulated gate terminal that when given a positive voltage the switch with turn on. The impedance of a MOSFET decreases when the drain-source voltage increases.
The 2N7002P,235 has many applications based on its characteristics. Its low Vgs(th) value makes it suitable for auto-level adjustment. This transistor can also be used for current-limiting, voltage amplification, and oscillator circuits. It can also be used as a switching element in various high-frequency circuits that require signal modulation or power conversion.
The basic working principle of this 2N7002P,235 transistor is fairly straightforward. With a positive voltage applied to the gate terminal, electrons will be harvested and stored in the gate insulation layer, a property known as “channel bending”. Due to the presence of these electrons, a conducting channel will be created. An electric current will then flow through this path, allowing electricity to move through the transistor.
Due to its low consumption, high speed response, and an easy self-adjustment ability, the 2N7002P,235 is commonly used in MOSFET switching applications such as relays and motor control circuits. This transistor is used extensively in the modern world, from discrete logic circuits on computer motherboards to power converters for appliances and consumer electronics.
In conclusion, the 2N7002P,235 is an enhancement-mode MOSFET transistor designed for a variety of uses. The transistor is composed of polysilicon and has a low Vgs(th) value. This transistor is used in a variety of applications, including voltage amplification, current-limiting, and auto-level adjustment. Additionally, the transistor works by applying a positive voltage to the gate terminal that creates a conducting channel within the transistor, allowing electricity to move through.
The specific data is subject to PDF, and the above content is for reference
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