![BSC016N03MSGATMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
BSC016N03MSGATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSC016N03MSGATMA1TR-ND |
Manufacturer Part#: |
BSC016N03MSGATMA1 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A TDSON-8 |
More Detail: | N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 125W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.45770 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 173nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSC016N03MSGATMA1 transistors are Field-Effect Transistors (FET) that are used in different types of integrated circuit (IC) applications. These transistors are part of a series of single-transistor FETs that are designed specifically for automotive and industrial applications. The BSC016N03MSGATMA1 transistor is useful for applications that require high levels of current and voltage. It is also capable of switching at high speed and features low on-state resistance.
A transistor is a type of electronic component that acts like an electronic switch and modulator. Transistors are commonly found in digital circuits, radio receivers, transceivers and other forms of electronic equipment. Field-Effect Transistors (FETs) are a special type of transistor that use an electric field to control the flow of current. FETs are widely used in modern electronics because they are much more efficient than their Bipolar Junction Transistor (BJT) counterparts.
The BSC016N03MSGATMA1 transistor has a maximum drain current rating of 45 amps, a maximum drain-source voltage rating of 60 volts, and a maximum gate-source voltage rating of 20 volts. It has a temperature range of -40°C to 125°C and an operating temperature range of -40°C to 100°C. The transistor also features an on-resistance rating of 1.3 Ω and an off-resistance rating of 18 MΩ.
The working principle of the BSC016N03MSGATMA1 transistor is based on the control of electric fields between its source and drain. The transistor is composed of a source, drain and gate. The source is the point at which the current enters the transistor and the drain is the point at which the current exits. The gate is the control electrode and is used to modulate the current flow between the source and drain. When a voltage is applied to the gate, it alters the electric field between the source and drain which allows the transistor to act like a switch.
The BSC016N03MSGATMA1 transistor can be used for a variety of applications including power switching, power conversion, motor drive systems, automotive ECUs, industrial electronics, and computer engineering. The transistor is well suited for high-power applications due to its high current rating and low on-state resistance. It is also capable of operating at high frequency thanks to its low gate capacitance. Overall, the BSC016N03MSGATMA1 transistor is a reliable and versatile device that can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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