BSC076N06NS3GATMA1 Allicdata Electronics
Allicdata Part #:

BSC076N06NS3GATMA1TR-ND

Manufacturer Part#:

BSC076N06NS3GATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 50A TDSON-8
More Detail: N-Channel 60V 50A (Tc) 2.5W (Ta), 69W (Tc) Surface...
DataSheet: BSC076N06NS3GATMA1 datasheetBSC076N06NS3GATMA1 Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 35µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSC076N06NS3GATMA1 is a transistor belonging to the family of Field Effect Transistors (FETs) and in particular to the kind of single MOSFETs. It is a specific type of transistor that is used in various applications to perform different tasks, and its working principles are known to all electronics engineers.

Generally, FETs are unipolar semiconductor devices, which use the gate (or the gate terminal) to control the flow of the current. The gate electrode in this case is insulated from the current-carrying electrodes and actually "controls" the current. This type of transistor is typically used for enhancement mode, as it allows for current flow in the transistor even when the control voltage is zero. FETs are very commonly used in digital logic circuits, due to its ability to react very quickly.

The specific BSC076N06NS3GATMA1 among other MOSFETs is usually used for power switching applications for low- and mid-power applications in industrial and consumer applications. This transistor can handle up to 75 V in a 900 mA drain current, thus is suitable for switching applications. It has also been specified as capable of reducing noise levels, as it is manufactured with a low on-resistance that limits energy losses in the form of heat.

The transistor has external protection diodes, which makes it perfect for applications that involve reverse voltage conditions. The BSC076N06NS3GATMA1 can be used as an electronic switch to control power and current flows in an electrical circuit. It can also be used as a voltage amplifier and voltage regulator by controlling the flow of current between its two terminals, the source and the drain.

This type of transistor works based on the principle of electrostatic field effect. It has two input terminals, the gate and the source. When the gate receives a particular voltage, it causes a field effect to be generated between the source and the drain. This field effect causes a change in the resistance of the transistor, controlling the flow of current between the source and the drain. Depending on the voltage supplied to the gate, the transistor will either be in an off state (very high resistance) or an on state (very low resistance). This makes it possible for the transistor to act as an electronic switch.

The BSC076N06NS3GATMA1 is also used in power amplifiers, as it can be used to control the current flow within the amplifier. It is also used in voltage converters, since it is capable of operating over a wide input voltage range. The transistor can also be used in applications that require high speeds, such as in synchronous rectifiers and logic circuits.

The BSC076N06NS3GATMA1 transistor is widely used due to its advantages of high current density, high switch time response and low on-resistance. It is also well-suited for high voltage and high frequency applications. In addition, the transistor is highly reliable and has a low switching noise, making it a perfect choice for any application.

The specific data is subject to PDF, and the above content is for reference

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