Allicdata Part #: | BSS123ATR-ND |
Manufacturer Part#: |
BSS123ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 170MA SOT23-3 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS123ATA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSS123ATA is a type of field-effect transistor (FET). It is a single-gate field-effect transistor made using a high-voltage CMOS process. The design of the device has been specifically designed for high-performance audio applications, such as pre-amplification, signal switching and audio processing.
FETs have been around for quite some time and have been used extensively in highly specialised applications ranging from telecommunications to power conversion. FETs offer a number of advantages over traditional bipolar transistors, such as low power consumption, low noise levels and high switching speeds. FETs are also typically capable of operating at much higher voltages than bipolar transistors, which makes them very versatile.
BSS123ATA has been specifically designed to improve the performance of audio applications. The device is able to operate at supply voltages from +70V to -100V, and can handle peak currents of up to 3.2A. The device is also capable of faster switching times than other devices of its type. This makes it very suitable for use in audio applications.
The working principle of BSS123ATA is relatively simple. It consists of two major components: the gate gate and the source drain. The gate gate creates a voltage-controlled field across the device, which can be used to control the current flowing through the device. The source drain is essentially a diode, which means it can produce a voltage drop to control the current flow. The gate gate and source drain can be both connected in the same way, or they can be alternatively connected.
The BSS123ATA is capable of operating in a wide range of environments, including low-voltage, high-power and high-frequency applications. Furthermore, the device can also be used in applications involving high levels of signal noise. This makes it very flexible and versatile.
In summary, BSS123ATA is a field-effect transistor (FET) specifically designed for use in audio applications. It is a single-gate FET made using a high-voltage CMOS process, and is capable of operating at supply voltages from +70V to -100V, and can handle peak currents of up to 3.2A. The device is also capable of faster switching times than other devices of its type, and can be used in a wide range of environments, including low-voltage, high-power and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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