BSS138-F085

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BSS138-F085 is a n-channel enhancement mode field-effect transistor (FET). It is a type of metal oxide semiconductor field-effect transistor (MOSFET) that is often referred to as an "enhancement-mode MOSFET". FETs such as the BSS138-F085 are used in many different applications, including switching and power management. Unlike an insulated-gate bipolar transistor (IGBT), which is a bipolar device, an FET does not require a separate gate driver.

The BSS138-F085 is a n-channel FET with a VGS (gate-source voltage) threshold of -2V, a minimum RDS (on-state resistance) of 0.7 ohm, and an off-state leakage current of 5.0 μA. It has a maximum continuous drain current of 1.6A and a maximum drain-source breakdown voltage of 25V. The FET has an on-state resistance of 0.8 ohms and a maximum junction temperature of 150°C.

The working principle of an FET is described as an electrically controlled field effect. When a voltage is applied to the gate of the transistor, it modifies the electric field at the channel and either attracts or repels electrons in the channel to create a low impedance path between the source and drain.

The BSS138-F085 can be used in both switching and linear applications. It is often used in low-side power switches, DC-DC converters, or similar applications where the source is connected to ground. It has the benefit of lower losses and better power efficiency than other power MOSFETs. In certain applications, such as audio amplifiers, it can also be used as an input stage or in high-frequency applications.

The BSS138-F085 is also useful in RF applications such as cellular base stations and radar systems, where the device exhibits good immunity to high-frequency interference and low noise amplification. In addition, it is suitable for signal conditioning and voltage level translation applications.

For switching applications, the BSS138-F085 should be used in combination with a higher-voltage FET, such as the BSS123-F085 or the BSS170-F085. This arrangement allows for higher voltage switching without sacrificing performance.

To summarize, the BSS138-F085 is a n-channel enhancement-mode FET that is suitable for use in switching, linear, and RF applications. It has a source-drain on-state resistance of 0.8 ohms, an off-state leakage current of 5.0 μA, and a gate-source voltage threshold of -2V. With its low on-state resistance and high-speed switching, the BSS138-F085 is an ideal choice for low-side power switches, DC-DC converters, signal conditioning, and voltage level translation applications.

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