BSS126H6906XTSA1 Allicdata Electronics
Allicdata Part #:

BSS126H6906XTSA1TR-ND

Manufacturer Part#:

BSS126H6906XTSA1

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 0.021A SOT23
More Detail: N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount ...
DataSheet: BSS126H6906XTSA1 datasheetBSS126H6906XTSA1 Datasheet/PDF
Quantity: 6000
3000 +: $ 0.16682
Stock 6000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 8µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSS126H6906XTSA1 is a type of MOSFETs (metal-oxide-semiconductor field-effect transistors) that belong to the single type. This type of transistor is popularly used in various applications as it provides high power switching capabilities and improved gain characteristics. It also has low on-resistance, which makes it suitable for different voltage applications like Power supply and DC/DC converters.

As it is a single MOSFET, it uses one P-channel and one N-channel, which makes it easier to use in many settings. The device has a drain-source voltage rating of -60V which makes it suitable for use in power switching, motor control and many other high voltage applications. It also has a maximum gate-source voltage rating of -20V and a drain current of 8A, making it ideal for applications such as power supply, DC/DC converters and motor control.

The device also has a maximum on-resistance of 6.9 ohms at 4.5Vds, which gives it excellent switching performance. The on resistance is also quite low compared to other types of MOSFETs, which gives it improved gain characteristics.

The working principle of BSS126H6906XTSA1 is quite straight forward. When the gate is open, the resistance between the source and the drain increases and the current flow starts. On the other hand, if the gate is closed, then the resistance between the source and the drain is decreased to almost zero, which in turn reduces the current flow. This is how the device works in its simplest form.

In conclusion, BSS126H6906XTSA1 is a single MOSFET which is mainly used for switching and controlling high power applications. It has excellent on-resistance, maximum gate-source voltage rating and drain-source voltage rating, making it suitable for different applications. Its working principle is straight forward and it can be easily operated with just a few adjustments.

The specific data is subject to PDF, and the above content is for reference

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