BSS138LT1

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The BSS138LT1 is a single N-channel enhancement-mode field-effect transistor (FET) that is commonly used in low-voltage, low-power applications. This type of FET is fabricated with a planar double-diffused MOS (DMOS) process and its dielectric isolation technology provides better electrical isolation between the input and output. It has a low on-resistance of around 1.7Ω, a low threshold voltage of 1.4V and a low input capacitance of 2.2pF. It is also available in a variety of packages such as SOT-23, SOT-323 and SOT-223 packages.

The BSS138LT1 has multiple applications and is most commonly used in switching, amplifier and buffer circuits. It can be used to switch power between ground and VDD, as well as providing a path to ground. It is also used as a raw driver in low-power, low-voltage digital circuits to provide high input impedance and low output impedance. As it is a low-voltage FET, it can be used in battery-operated applications where there is a need for reduced power consumption.

The working principle of the BSS138LT1 is based on the same principles of operation for all FETs. FETs are three-terminal devices that are controlled by a gate input. When the gate input is at ground (0V), the FET is “off”, meaning there is no conduction between the source and drain terminal. When the gate input is above a certain value (threshold voltage), the FET is “on”, meaning current can flow from the source to the drain. In the case of the BSS138LT1, this threshold voltage is around 1.4V.

The BSS138LT1 has an integrated protective device that limits the maximum on-state current to a safe level in the event that an over-current situation occurs. It also features an internally-latched dual MOS structure to provide an improved output voltage and fast switching times, making it ideal for high-speed applications. In addition, its low input capacitance makes it suitable for use with high-frequency signals.

The BSS138LT1 is a versatile and reliable device that is widely used in a variety of applications. It has a low threshold voltage and on-resistance, making it suitable for low-voltage and low-power applications. It also has an integrated protective device and dual MOS structure for fast switching times, as well as a low input capacitance for high-frequency signals. Thanks to its versatility, the BSS138LT1 can be utilized in a wide range of applications, making it one of the most popular enhancement-mode FETs on the market.

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