BSS123-7-F

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	60pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	6 Ohm @ 170mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	170mA (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSS123-7-F Application Field and Working Principle

The BSS123-7-F is a Field Effect Transistor (FET) that provides excellent high voltage, high frequency, and low RDS (on) performance. It is a single VDMOS (Voltage Divider Metal Oxide Semiconductor) device, meaning it has two independent MOSFET (metal–oxide–semiconductor field-effect transistor) that are connected in series internally. The series connection provides greater power capability, primarily at higher voltages. It is available as an N-channel FET, meaning it requires a negative voltage to turn it on. This makes it extremely useful in many different applications, such as high-speed switching, and is also necessary for reducing capacitive AC input crossovers.

Features and Advantages of BSS123-7-F

The BSS123-7-F offers several advantages to other Field Effect Transistors (FETs), specifically Single VDMOS devices. Its single package design provides superior high voltage, high frequency and low RDS (on) performance in the same package size as many other FETs. It also features a built-in temperature sensor, which allows for improved temperature stability and improved reliability. Additionally, the BSS123-7-F provides a wide operating voltage range of 12V to 200V, with stand-off voltages of up to 5kV. Finally, its superior switching characteristics also allow for increased power efficiency, as well as improved cost savings.

Applications

The BSS123-7-F is widely used in high speed switching applications, due to its superior switching characteristics. It is commonly used in digital logic applications, such as the control and multiplexing of video signals, as well as digital RF applications, such as CATV and satellite systems. Additionally, the BSS123-7-F is often used in power conversion and motor control applications, where its low RDS (on) capability can help reduce power losses. It is also used in automotive control systems and power supply applications.

Working Principle

The BSS123-7-F works on a principle called voltage division, where the internal MOSFETs are connected in series and divide the input voltage into two separate values. This relationship between the voltage division of the FETs provides superior high voltage and low RDS (on) performance. This allows the FET to be used in switching applications where higher voltages are required.When the BSS123-7-F is turned on, the voltage division occurs, resulting in an even voltage distribution across both of the FETs. This ensures that the internal MOSFETs are operating within their linear region, as opposed to their saturation region. As a result, the FET can handle higher loads without any power losses. Additionally, this process also eliminates any capacitive crossovers, which can be commonly seen in other FETs.

Conclusion

The BSS123-7-F is a Single VDMOS FET that provides superior high voltage, high frequency, and low RDS (on) performance. It is widely used in digital logic applications, such as the control and multiplexing of video signals, as well as in power conversion and motor control applications. It works on the principle of voltage division, where the two internal MOSFETs are connected in series and divide the input voltage into two separate values. This allows for superior high voltage and low RDS (on) performance, as well as minimized power losses at higher loads.

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