BSS138NL6327HTSA1 Allicdata Electronics
Allicdata Part #:

BSS138NL6327HTSA1TR-ND

Manufacturer Part#:

BSS138NL6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 230MA SOT-23
More Detail: N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ...
DataSheet: BSS138NL6327HTSA1 datasheetBSS138NL6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSS138NL6327HTSA1 is a N-channel enhancement mode field effect power MOSFET that is suitable for use in a wide range of applications. This device has various features including low gate charge, good forward transfer characteristics, and high voltage and current handling capabilities. The BSS138NL6327HTSA1 is manufactured using state-of-the-art semiconductor process technology that makes it ideal for use in today\'s high performance circuits.

BSS138NL6327HTSA1 has the following features:

  • Low gate charge for low power consumption
  • High voltage and current handling capability
  • High switching frequency
  • Good forward transfer characteristics

These features make the BSS138NL6327HTSA1 ideal for use in a variety of applications including motor control, electronic lighting, power supplies and audio/video equipment.

The working principle of the BSS138NL6327HTSA1 is based on the physics of electron and hole transport in a MOSFET. When a positive voltage is applied to the gate of the MOSFET, electrons are attracted from the source to the drain, thereby allowing current to flow from the source to the drain. This mechanism is referred to as an enhancement mode. The BSS138NL6327HTSA1 is essentially a voltage-controlled switch that can be used to turn on and off devices or systems quickly and efficiently.

The BSS138NL6327HTSA1 is a great choice for a variety of applications. It is widely used as a power switch in motor control, electronic lighting, power supplies, and audio/video equipment. It is also often used in gate drive circuits and radio frequency amplifiers. The great combination of features makes the BSS138NL6327HTSA1 an ideal choice for a variety of applications.

Overall, the BSS138NL6327HTSA1 is a great choice for any application requiring good forward transfer characteristics, high voltage and current handling capability and low gate charge. The device is suitable for use in a wide range of applications and provides excellent performance in high performance circuits.

The specific data is subject to PDF, and the above content is for reference

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