BSS123TA Allicdata Electronics
Allicdata Part #:

BSS123TR-ND

Manufacturer Part#:

BSS123TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 170MA SOT23-3
More Detail: N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount...
DataSheet: BSS123TA datasheetBSS123TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSS123TA is a type of transistor-field effect transistor (FET) used for different applications. FETs are used for signal processing and amplification, and offer good linearity, low noise and better isolation than a standard bipolar junction transistor (BJT). BSS123TA is a single-stage FET, and it is an enhancement-mode n-channel FET which means that it can be used to conduct a signal with low voltage, low current and good isolation.

The working principle of the BSS123TA transistor is as follows. Usually FETs act as voltage-controlled devices, where the conductance of the channel is controlled by a gate voltage. When the gate voltage increases, the conductance of the channel increases, and when the gate voltage decreases, the conductance of the channel decreases. This means that the FET acts like a switch, and can be turned on or off depending on the gate voltage.

The BSS123TA is mainly used as an amplifier or a buffer stage, as it has low noise, low voltage gain and good linearity characteristics. It can be used in a variety of applications such as audio, video, robotics and control systems. It is also often used as a switch in electronic circuits, as it can be used to control signals from high-frequency sources.

BSS123TA can also be used in radio frequency (RF) applications due to its high-frequency response. It is commonly used in power amplifiers, mixers and other signal processing stages. The FET can also be used as a voltage-controlled oscillator (VCO) due to its low input capacitance, high frequency response and good linearity.

The BSS123TA has a few advantages over other FETs. It has a low input capacitance which means that it can operate at high frequencies. It also has higher gain at low voltages and better linearity than other FETs. It also has a better thermal stability and a longer life than most other FETs.

The BSS123TA is a versatile FET that can be used in a variety of different applications. It is an enhancement-mode n-channel FET which means that it can be used to conduct a signal with low voltage, low current and good isolation. It is mainly used as an amplifier or a buffer stage, as it has low noise, low voltage gain and good linearity characteristics. It is also used in radio frequency applications as a power amplifier, mixer or other signal processing stages. The FET has a few advantages over other FETs, such as its low input capacitance, high frequency response and good linearity.

The specific data is subject to PDF, and the above content is for reference

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