| Allicdata Part #: | BSS126H6327XTSA2TR-ND |
| Manufacturer Part#: |
BSS126H6327XTSA2 |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V 0.021A SOT-23 |
| More Detail: | N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount ... |
| DataSheet: | BSS126H6327XTSA2 Datasheet/PDF |
| Quantity: | 6000 |
| 1 +: | $ 0.07200 |
| 10 +: | $ 0.06984 |
| 100 +: | $ 0.06840 |
| 1000 +: | $ 0.06696 |
| 10000 +: | $ 0.06480 |
| Vgs(th) (Max) @ Id: | 1.6V @ 8µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 28pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 5V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 500 Ohm @ 16mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21mA (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSS126H6327XTSA2 Field Effect Transistor (FET) is designed to control power or switching within integrated circuits. It is a single-channel MOSFET, which is commonly used in the industrial automation, robotics, aerospace and automotive industries.
FETs are voltage-controlled devices that allow for current to be transferred between two separate inputs and outputs. They work by varying the resistance of the gate of the device in response to a change in input voltage. The MOSFET, in particular, accomplishes this by using a metal oxide semiconductor (MOS) gate, hence the term “metal oxide semiconductor field effect transistor.”
The BSS126H6327XTSA2 is an N-Type MOSFET, meaning the electrical charge of the input voltage is opposite that of the output. It has an on-state drain current of 6.3A, a drain-source voltage of up to 60V, and a total gate-source voltage of 2.5V. This makes it ideal for low-voltage power and switching applications.
The BSS126H6327XTSA2 is a subminiature FET with a small form factor design, making it ideal for space-constrained applications. It also has a low-resistance body diode which improves its performance. The low-capacitance levels of the device allow for a high-frequency response, making it suitable for high-speed switching applications.
The BSS126H6327XTSA2 uses a depletion-type MOSFET structure and the transfer characteristics of the device are controlled by changing the voltage at gate. When the gate voltage is low, the device is in a low-resistance OFF state. When the gate voltage is increased to a higher-than-threshold level, the device enters an ON state and the current starts to flow from drain to source.
The device is also designed to have a fast response time, allowing it to quickly switch between the on and off states in response to the input voltage. This makes it ideal for high-speed switching applications and applications that require fast response times.
The BSS126H6327XTSA2 can be used for a variety of power and switching applications, including digital switching, motor control, power distribution, power supply design, and telecommunications. Its small form factor makes it ideal for use in small-scale applications, and its fast response time makes it suitable for applications that require fast switching.
The specific data is subject to PDF, and the above content is for reference
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BSS126H6327XTSA2 Datasheet/PDF