BSS138W-7

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 10V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 220mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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BSS138W-7 Application Field and Working Principle

BSS138W-7 transistors are a type of field-effect transistors (FETs). They are also known as metal oxide semiconductor field-effect transistors (MOSFETs). This type of transistor is a relied upon digital application device used in a plethora of electronic applications, control systems, and digital circuits. BSS138W-7 transistors belong to the family of single enhancement-mode MOSFETs (metal-oxide semiconductor field-effect transistors).The working principle of a BSS138W-7 MOSFET is based on the behavior of electrons and holes, which are responsible for the charge current conduction in the device. This semiconductor device has three terminals, the source, drain, and gate. An electric field is used to modulate charge currents flowing through the device. This field is generated by the electric charges placed on the gate terminal. The electric field is powerful enough to penetrate through a thin insulating layer of metal-oxide, which is typically a few nanometers thick. The source terminal forms a connection to a semiconductor substrate, which is usually a silicon wafer. Charged carriers are made to flow through this terminal and onto the drain terminal, which is the second connection to the substrate. The electric charge arrives at the drain terminal via a channel situated between the source and drain terminals. The electric field then modulates the current by controlling the width of the current channel. BSS138W-7 transistors find application in a vast combination of devices, circuits, and systems. They are commonly used in regulators, power supplies, integrated circuit fabrication, computers, invertors, audio amplifiers, switches, timer circuits, and pulse transformers. These transistors can also be found in digital circuit designs used to process and transfer data like switch systems and encoders. The BSS138W-7 is preferred for use in low-power low-voltage applications. Its metal-oxide (MOx) gate allows for a low power on-state resistance and a low threshold voltage. It is well suited for battery powered devices and solar powered systems due to its extremely low operating and standby power consumption. In summary, the BSS138W-7 MOSFET transistor belongs to the family of single enhancement-mode MOSFETs. It is composed of three terminals, the source, drain, and gate and works on the principle of electron and hole conduction. Electric field is used to modulate charge currents via the electric charges on the gate terminal, which is responsible for generating this electric field. This type of transistor is widely used in power supplies, regulators, digital systems, switches, timer circuits, and other audio devices. The BSS138W-7 is particularly suitable for low-power low-voltage applications and is oftentimes used in battery and solar powered systems.

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