BSS8402DW-7-F Discrete Semiconductor Products |
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Allicdata Part #: | BSS8402DW-FDITR-ND |
Manufacturer Part#: |
BSS8402DW-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 60V/50V SC70-6 |
More Detail: | Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA... |
DataSheet: | BSS8402DW-7-F Datasheet/PDF |
Quantity: | 84000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V, 50V |
Current - Continuous Drain (Id) @ 25°C: | 115mA, 130mA |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 200mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | BSS8402DW |
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BSS8402DW-7-F transistors are used in a wide variety of applications and are designed to meet a variety of power requirements.
A field-effect transistor (FET) is a transistor whose active region is defined by a field of concentrated electrons or holes. FETs are advantageous for certain types of applications due to their efficient power management and high switching speeds. The BSS8402DW-7-F is a type of FET array, which consists of multiple FETs matched together. This array can be used for a number of different purposes, including signal amplification, signal switching, or signal conditioning.
The BSS8402DW-7-F array can be used in many different types of circuits, from simple to complex. The most basic applications of these FETs include power management and noise reduction. When used in circuits, they can reduce the amount of current flowing through a component, which helps to reduce power consumption and eliminate undesirable noise and signal interference. They can also be used to protect delicate integrated circuits (ICs) from the damaging effects of overvoltage.
When using the BSS8402DW-7-F array, it is important to understand the working principles behind this type of device. The FETs in the array typically have a gate, drain, and source terminal. The gate terminal is responsible for controlling the flow of current through the device. By applying a positive voltage to the gate terminal, the FET will turn on, allowing current to flow from the drain to the source. Conversely, applying a negative voltage to the gate terminal will turn the FET off and block the current flow.
The BSS8402DW-7-F array can also be used to achieve a specific electrical behavior. By combining multiple FETs in a specific configuration, the array can be used to create complex waveforms, amplifiers, and filters. Additionally, the array can be used to create clock signals, waveform generators, and power controllers. This versatility makes it an ideal choice for a wide range of applications.
In conclusion, the BSS8402DW-7-F array is a type of FET array that can be used for a variety of purposes, ranging from simple power management and noise reduction to complex signal amplification and waveform generators. With its wide range of applications, these FET arrays are a great choice for both simple and complex circuitry.
The specific data is subject to PDF, and the above content is for reference
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