BSS84PH6433XTMA1

Vgs(th) (Max) @ Id:	2V @ 20µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	19pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	8 Ohm @ 170mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	170mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSS84PH6433XTMA1 is a type of single N-channel logic level field-effect transistor (FET), which is characterized for its extremely low on-state resistance and low gate charge. It is designed to be used in loads switched up to 40 volts and with a maximum drain current of 16A, making it ideal for power applications such as DC/DC converters, reverse polarity protection, load switching, and motor control, as well as power amplifier output stages.This FET utilizes an N-channel depletion (normally-on) mode of operation, meaning that it acts as an open circuit when there is no voltage applied to the gate. When voltage is applied to the gate, the resistance between the source and the drain decreases, allowing current to flow. This type of operation makes the FET ideal for use in both analog and digital circuits, as it can be easily switched on and off.The BSS84PH6433XTMA1 is manufactured with a planar-style process, which is a form of semiconductor fabrication that utilizes a thin film of semiconductor material established over a flat substrate. This allows for a high level of precision and accuracy in the components produced and, because it is a planar process, it can be easily incorporated into other metal-oxide-semiconductor (MOS) production processes.The BSS84PH6433XTMA1 utilizes a monolithic structure, meaning that the substrate and the device itself are formed together as a single unit, allowing for a low power operation and a faster switching speed. Pressure-resistant contacts on the surface of the device also ensure a high level of reliability.Thanks to its thin-film fabrication and monolithic structure, the BSS84PH6433XTMA1 is able to provide the user with a high level of temperature and power control. The device features a maximum continuous drain current rating of 16A, along with a maximum junction temperature of 175 degrees Celsius for increased capability. The device also has a low gate charge of 2.5nC, allowing for low power consumption and decreased switching time for increased performance. Low RDS(on) values of 10mΩ also provide faster and more reliable switch times, reducing both power dissipation and switching losses.Overall, the BSS84PH6433XTMA1 is an excellent FET for applications requiring extremely low on-resistance and a fast switching time. It can be used in power applications such as DC/DC converters, reverse polarity protection circuits, load switching, and motor control. It is also well suited for power amplifier output stages due to its low power consumption, increased temperature stability, and fast switching time.

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