BSS806NL6327HTSA1

Series:	OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 2.5V
Rds On (Max) @ Id, Vgs:	57 mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id:	750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs:	1.7nC @ 2.5V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	529pF @ 10V
FET Feature:	--
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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BSS806NL6327HTSA1 Application Field and Working PrincipleBSS806NL6327HTSA1 is a single N-channel MOSFET transistor with a high-polarity drain-to-source voltage. This type of transistor has been designed for use in applications in which fast switching times and very low resistance is required. It is also ideal for low-voltage applications, as the on resistance of the device is reduced. ApplicationsThis MOSFET transistor is most commonly used for switching environments in the automotive, automotive systems, communications, consumer electronics and industrial markets. BSS806NL6327HTSA1 is primarily used for switching power supplies, regulating current flows and controlling the output of high-power circuits. This type of transistor can be found in mobile phones, digital audio, power inverters, gaming consoles, and automotive systems. Working PrincipleBSS806NL6327HTSA1 is a single N-channel MOSFET Circuit which has a high-polarity drain-to-source voltage. This type of transistor is based on an unipolar Field Effect and uses the principle of minority carrier injection. The current flow between the source and drain terminals is controlled by the applied voltage between the gate and source terminals. When no voltage is applied, current flow is blocked. But, when the applied voltage reaches or exceeds a certain threshold level, the gate will start conducting and allow current to flow between the source and drain.The strength of BSS806NL6327HTSA1 lies in its fast switching times. The device can switch from its cut-off state to its on state in less than 2 nanoseconds. This makes it an ideal choice for applications which require multiple types of signals, or for situations where signals need to be processed quickly. SafetyWhen using BSS806NL6327HTSA1, it is important to take proper precautions in order to ensure the safe operation of the device. When using the transistor, it is important to make sure that the source to drain voltage does not exceed the rated maximum voltage. In addition, care must be taken to ensure that the gate voltage is not higher than the rated gate voltage. Using BSS806NL6327HTSA1 without proper safety precautions could result in damages to the device, or worse, injury or death of any person handling the device. Therefore, it is important to take the appropriate measures to protect yourself and those around you when using the transistor. In summary, BSS806NL6327HTSA1 is a single N-channel MOSFET transistor with a high-polarity drain-to-source voltage. This type of transistor is most commonly used for switching environments in the automotive, automotive systems, communications, consumer electronics, and industrial markets. It is ideal for low-voltage applications, as its on resistance is low. The device can switch from its cut-off state to its on state in less than 2 nanoseconds, making it an ideal choice for applications which require multiple types of signals or fast-processing signals. When using BSS806NL6327HTSA1, it is important to take proper safety precautions in order to ensure safe operation.

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