BSS87E6327 Discrete Semiconductor Products |
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Allicdata Part #: | BSS87INTR-ND |
Manufacturer Part#: |
BSS87E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 240V 260MA SOT-89 |
More Detail: | N-Channel 240V 260mA (Ta) 1W (Ta) Surface Mount PG... |
DataSheet: | BSS87E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 240V |
Current - Continuous Drain (Id) @ 25°C: | 260mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 260mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 108µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 97pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT89-4-2 |
Package / Case: | TO-243AA |
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The BSS87E6327 is a high-performance N-channel enhancement type filed effect transistor (FET) used in a variety of applications. It is made with a high-quality silicon material and has a low on-resistance, improved current handling capacity, and excellent performance. It is available in a TO-220 or TO-263 package.
The BSS87E6327 has a maximum voltage rating of 30 volts and a maximum drain current rating of 200 mA. It has an on-resistance of less than 0.1 ohm and a maximum total gate charge of 56 nC. It also has a high breakdown voltage of 550V. The BSS87E6327 is suitable for fast loading and unloading applications, and for high-efficiency switch control signals.
The working principle, or how the BSS87E6327 works, is by controlling the current from the source to the drain with a gate voltage. When the gate voltage is zero, no current will flow between the source and the drain, as the drain and source terminals are completely insulated. When the gate voltage is increased, current will start to flow allowing electrons to flow from the source to the drain channel. As the voltage is increased, current will also increase, until it reaches a maximum rating. The BSS87E6327 is an enhancement type MOSFET which means the gate voltage must be increased above a certain threshold value to allow the maximum current to flow.
The BSS87E6327 can be used in a variety of applications where rapid switching and high current capacity are needed. It is suitable for both digital and analog applications. It can be used as a switch, as a level shifter, as a boost converter, and for DC-DC power conversion. Additionally, it can be used in get-instrumentation, power management and motor control systems. Some applications for the BSS87E6327 include power management circuits, logic-level translation circuits, and high-current switching.
In conclusion, the BSS87E6327 is a high-performance, N-channel enhancement-type FET used in a variety of applications. It has a low on-resistance and a high breakdown voltage ratings. It has a maximum voltage rating of 30V and a maximum drain current rating of 200mA. It can be used in applications requiring rapid switching and high current capacity, and is useful as a switch, as a level shifter, as a boost converter and for DC-DC power conversion.
The specific data is subject to PDF, and the above content is for reference
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