Allicdata Part #: | BSS816NWL6327-ND |
Manufacturer Part#: |
BSS816NW L6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 1.4A SOT323 |
More Detail: | N-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount P... |
DataSheet: | BSS816NW L6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.5V |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 2.5V |
Vgs(th) (Max) @ Id: | 750mV @ 3.7µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 2.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
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BSS816NW L6327 is a type of field-effect transistor (FET). It is used to control the electrical signals that travel along a circuit, allowing multiple options and providing users with increased control over their circuit. The device is an N-channel FET with a max drain current of 4A, and a breakdown voltage of 40V. It has a low RDSon of 56mΩ and a gate voltage of −2.5V to +10V. It is ideal for applications that require low power, low noise, and high speed.
Applications
The BSS816NW L6327 can be used for many applications. One example is for power management for many devices like portable electronic products, such as cell phones, game consoles, or other mobile devices. The device can also be used in battery-powered devices, where it is capable of regulating the current to ensure maximized power efficiency, while also offering several other current regulation options. The device can be used in motor control, LED lighting systems, and audio systems. Additionally, it is suitable for use in automated systems, as it is able to provide flexible input/output control options, allowing for easy integration into an automated system.
Working Principle
A field-effect transistor, like the BSS816NW L6327, works by creating an electric charge on the gate. This charge allows for the control of the current flowing through the transistor, by the voltage applied to the gate. To illustrate, if the voltage applied is positive, the gate will act like a positive charge, allowing more current to flow, and if it is negative, the gate will act like a negative charge, blocking current from flowing. The transistors in this type of FET are arranged in an electrode pattern, allowing for the maximum amount of charge to be produced, and allowing for precise control over the amount of current flowing through the circuit.
The BSS816NW L6327 is a great choice for any application that requires precise control over the current that flows through the circuit. It is able to provide flexibility and precision, while also offering a low power consumption, a low noise, and a high speed. With its wide range of applications and its ability to ensure efficient operation, it makes a great choice for any project or system that requires precision control.
The specific data is subject to PDF, and the above content is for reference
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