BSS84_D87Z Allicdata Electronics
Allicdata Part #:

BSS84_D87Z-ND

Manufacturer Part#:

BSS84_D87Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 130MA SOT-23
More Detail: P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount ...
DataSheet: BSS84_D87Z datasheetBSS84_D87Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V
FET Feature: --
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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<p>BSS84_D87Z is a unique type of transistor that is widely used in a variety of applications. It is part of the Field Effect Transistors (FETs) family, which is specifically Single-MOSFETs. The term MOSFET stands for "metal-oxide-semiconductor field-effect transistor," a type of field effect transistor (FET). </p><p>A FET is a type of transistor that uses an electric field to control the flow of current from source to drain. Unlike a bipolar transistor, which uses both an electric field and a charge imbalance to control current, FETs only require a single gate voltage to regulate the current flow. The single-MOSFETs are constructed with a single gate and are often used in high power applications, as they operate more efficiently than bipolar transistors.</p><p>BSS84_D87Z transistors are designed for large-scale digital applications and have a power rating of up to 10A. They are made from a silicon-based material, which is highly resistant to electrical breakdown, making them very reliable and efficient. It has a low power dissipation of 20mW and is quite small in size, making it ideal for use in a variety of applications.</p><p>The working principle of a BSS84_D87Z is based on the apposition of electrons to a metal gate. When a voltage is applied to the gate, it attracts the negative electrons, which generates an electric field in the area around the gate. This electric field then attracts and pushes the electrons in the channels between the source and drain, allowing the current to flow in one direction.</p><p>The BSS84_D87Z is a relatively easy to use and reliable transistor. Since it is a single-gate transistor, there is no need to worry about the complexities of multiple-gate transistors. Additionally, since they are made from silicon, they are highly resistant to electrical breakdown, making them a great choice for a variety of applications.</p><p>BSS84_D87Z is commonly used in a wide range of digital, RF and power amplifier applications. In digital applications, BSS84_D87Z is ideal for use as voltage regulators, buffer amplifiers and current sources. In addition, they are used in RF applications as power amplifiers, mixers and signal converters. In power amplifier applications, BSS84_D87Z transistors are highly efficient, as they allow for very low levels of power dissipation.</p><p>In short, BSS84_D87Z is an incredibly versatile and reliable transistor. It has a wide range of applications and its robust design ensures reliable performance even in the toughest environments. It is also relatively easy to use and it is relatively inexpensive, making it a great choice for both commercial and DIY applications.</p>

The specific data is subject to PDF, and the above content is for reference

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