BSS84-7-F Allicdata Electronics
Allicdata Part #:

BSS84-FDITR-ND

Manufacturer Part#:

BSS84-7-F

Price: $ 0.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 50V 130MA SOT23-3
More Detail: P-Channel 50V 130mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: BSS84-7-F datasheetBSS84-7-F Datasheet/PDF
Quantity: 1000
1 +: $ 0.31000
10 +: $ 0.29000
100 +: $ 0.25000
1000 +: $ 0.19000
10000 +: $ 0.11000
Stock 1000Can Ship Immediately
$ 0.31
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FETs and MOSFETs are widely used in various application fields due to their high input impedance, low power requirements, and high switching speed. The BSS84-7-F application field and working principle can be an interesting topic to explore.

The BSS84-7-F is a dual N channel enhancement mode MOSFET. BSS84-7-F falls into the category of Single FETs and is designed to switch on and off at medium to high frequencies. The MOSFET can work in both linear and saturated mode. The saturation voltage of the device varies between 0.1V to 1V depending on the load current. The device has a typical voltage gain of 10V/V and is usually operated at a drain voltage of 5V.

The BSS84-7-F is widely used in various application fields because of its high input impedance, high switching speed and low power requirements. It can be used in power management, motor control, gate driving and audio amplifier applications. In power management applications, the BSS84-7-F is used as a high side switch to enable and disable the current circuit. In motor control applications, the device is used to control the speed of the motor by controlling its switching frequency. The device can also be used in gate driving applications to control the operation of other MOSFETs or other voltage controlled switches.

The BSS84-7-F is constructed with an N-Channel enhancement mode MOSFET, which contains a source, a drain, and a gate. The source and drain are connected to the power supply while the gate is connected to an external signal source that can be a logic signal, pulse signal or an analog signal. When the gate receives the signal, it triggers an electric field that alters the flow of current across the semiconductor material present in the device. The current flow is then controlled by the signal at the gate and the device switches accordingly.

The BSS84-7-F can be used in a number of audio amplifier applications due to its fast switching speed and low power requirements. It can be used as a cascode amplifier for low noise applications or as a driving amplifier for high power applications. The device can also be used as an audio filter due to its low distortion and high input impedance.

In summary, the BSS84-7-F application field and working principle can be useful for many applications. The device is an N-channel enhancement mode MOSFET designed for medium to high frequency operations. It has a high input impedance, low power requirements and a high switching rate, making it suitable for many applications such as power management, motor control, gate driving and audio amplifiers. This device can be a cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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