BSS84AKW,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

 The BSS84AKW,115 is an insulated gate bipolar transistor. It is part of a large family of transistors regarded as single-gate field-effect transistors (FETs). This type of transistor is used in a wide range of electronic applications and is specifically designed for operating in low-voltage and high-speed applications. In this article we will discuss the application fields and working principles of the BSS84AKW,115.

The BSS84AKW,115 is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) which is a type of insulated gate field-effect transistor used in a variety of digital systems. It has a low input capacitance and a fast switching speed, which makes it an ideal choice for high-speed digital applications. The transistor is often used in low-power applications, where it provides improved power efficiency through a low on-state resistance. It is also highly reliable, with a long operational life.

The device is typically used in digital logic, switching and amplifier circuits, as well as for power management and voltage regulation. It is most commonly used for logic gates where it can be used to drive systems from low supply rail voltages, or to drive load currents on the order of very low micro-amps. It is also often used for general purpose switching, as well as for low-noise, high-efficiency power conversion. It is also often used in telecom systems where its high linearity, low distortion, and low cost make it an attractive option.

The BSS84AKW,115 is an N-channel MOSFET, which means that its switching action is activated by passing a small current through a gate terminal. When a small voltage is applied to the gate, the transistor switches from the off-state to the on-state, allowing current to flow through a controlled path. The benefit of this transistor is that it has a very low threshold voltage, which means that it can switch from on to off even at very low voltage levels. This makes it ideal for applications that need to switch quickly and reliably.

The working principle of the BSS84AKW,115 is based on the electrostatic action of a voltage applied between the drain and gate. When a voltage is applied to the gate of the transistor, it causes an electric field to be created. This electric field creates an electrostatic charge which changes the device\'s conductivity in an inverse manner to the gate voltage applied. As the gate voltage is increased, the gate becomes more resistant to current flow, and as the gate voltage is decreased, the gate carries more current and reduces the resistance of the channel.

The maximum voltage rating of the BSS84AKW,115 is 20V and it requires 0.2V to be applied to its gate. This is why it is often used in low-voltage and high-speed circuits, as the low gate voltage means that the transistor can switch from on to off more quickly and reliably. The main benefit of using this device is that it allows for power to be managed and voltage to be regulated accurately, increasing the efficiency of any digital system it is used in.

The BSS84AKW,115 is a versatile device that is used in many different electronic applications. It is an efficient transistor and its wide operating range makes it ideal for use in low voltage and high speed circuits. The device is reliable and cost-effective making it a great option for any digital system with power management and voltage regulation requirements.

The specific data is subject to PDF, and the above content is for reference