BSS84WQ-7-F

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	45pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	10 Ohm @ 100mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	130mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSS84WQ-7-F Application Field and Working Principle

The BSS84WQ-7-F is a type of single enhancement-mode N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This type of transistor is defined as a field-effect transistor that uses metalloid oxide as the gate dielectric of the MOS structure. Most transistors are designed as three-terminal devices, with the third terminal being the gate. The gate is used to control the current flow created by placing a voltage in the gate and therefore controlling the conductivity of the transistor. Gate voltage controls the amount of current that flows, and is usually quite low compared to the power dissipation at the other terminals. The BSS84WQ-7-F features a low gate voltage to threshold voltage and high gate driving capability. Its very low on-resistance (Rdson) makes this type of transistor ideal for use in a variety of applications. It can be used in power supplies, switched power converters and power amplifiers, as well as incircuits that require high switching speed and low power consumption.The BSS84WQ-7-F is rated for operation at temperatures up to 175°C and is available in multiple package options. It is typically used in applications including motor control, lighting, inductive load control, consumer appliances, home appliance control, secondary side rectifiers, and automotive power systems. The BSS84WQ-7-F is constructed with a MOS structure that stores any electrons injected into the drain structure, thus generally providing a low on-state resistance and a low off-state leakage current. The transistor exhibits higher currents for a lower on-resistance than standard transistors. The BSS84WQ-7-F works on the principle of metal-oxide-semiconductor field-effect transistor, which is a type of field-effect transistor that uses metalloid oxide as the gate dielectric. MOSFETs are more efficient and electrically manageable than other transistor types, such as BJT and JFETs, as they offer much lower power consumption and higher switching speeds.The gate of the BSS84WQ-7-F is made up of metalloid oxide, usually silicon dioxide, which is used to control the flow of electrons. When a voltage is applied to the gate and the drain, the gate potential is increased, this increases the attraction between the gate and the channel and allows more electrons to flow from source to drain. If a voltage is applied to the gate and the source, the gate attracts less electrons from the channel, which reduces the current between source and drain and turns the device off. By controlling the gate voltage, the current flow can be precisely controlled.This type of transistor can be used in various applications due to its high gate driving capability, low gate voltage to threshold voltage, and low on-resistance. The BSS84WQ-7-F is commonly used in motor control, lighting, inductive load control, home appliance control, and automotive power systems, as well as in circuits that require high switching speed and low power consumption.

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