BSS87E6327T Discrete Semiconductor Products

The BSS87E6327T is an N-Channel Enhancement Mode Width Modulated MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The device is made up of two types of gate oxide layers, which give it its width modulation properties. The first oxide layer is the source-drain layer, while the second oxide layer allows the transistor to be switched on and off. With this device, the gate voltage controls the drain current, and the source-drain voltage controls the gate current.

The BSS87E6327T is typically used in applications that require precise control of electrical current, such as switching and power control. It is ideal for controlling power switching circuits and for implementing advanced motor control systems. Additionally, it is useful for applications that require precise switching of current and voltage, such as load switching, current sensing, and line-side drive systems. It is also suitable for applications such as hot-swapping.

The working principle of the BSS87E6327T involves the manipulation of electrical charge carriers. The device has two metal electrodes, one on the source-drain side and one on the gate side. When a positive voltage is applied to the gate electrode, it attracts electrons from the source-drain side and forms an inversion layer. This inversion layer allows for the current flow between the source-drain side and the gate side.

By adjusting the voltage on the gate side, the concentration of electrons in the inversion layer can be adjusted, thereby controlling the current flow from the source-drain side to the gate side. The device is usually operated in the saturation region, where the current is dependent on the gate voltage. In this mode, the gate voltage can be adjusted to control the drain current which, in turn, controls the power switching circuit.

The BSS87E6327T is an ideal choice for applications that require precise control and management of electrical current. Its width modulation features allow the device to precisely control the current flow and the gate voltage. This device is a perfect choice for applications such as power switching, motor control systems, and hot-swapping.