Allicdata Part #: | BSS8402DWDITR-ND |
Manufacturer Part#: |
BSS8402DW-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 60V/50V SC70-6 |
More Detail: | Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA... |
DataSheet: | BSS8402DW-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V, 50V |
Current - Continuous Drain (Id) @ 25°C: | 115mA, 130mA |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 200mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | BSS8402DW |
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BSS8402DW-7 is a high-performance, silicon complementary metal oxide semiconductor (CMOS) complementary N-channel, enhancement mode MOSFET logic array. This type of logic array has been specifically developed for use in applications that require high speed signal switching and logic interface. Its unique construction and design makes the BSS8402DW-7 suitable for high speed applications, such as communications systems, automotive systems, and industrial system signal transfer. The BSS8402DW-7 is manufactured in a compact 8-pin dual-in-line package with a lead pitch of 0.1 inch (2.54 mm).
The BSS8402DW-7 is composed of four N-channel enhancement mode MOSFETs that can process and switch high speed signals up to 1.2 GHz. The array features four independent input control pins and four independent output terminals that can be used for either bidirectional signal transfer or logic interfacing. With high MOSFET transconductance, it offers superior switching performance with low voltage and low current levels. The BSS8402DW-7 also offers internal parasitic diode protection and is designed with an internal ESD protection function to guard against external static electricity. It can operate from a supply voltage of 4.2 volts up to 18 volts DC.
BSS8402DW-7’s working principle is based on the operation of its MOSFETs. MOSFETs are transistors used in various electronic circuits and are composed of three terminals: the source, drain, and gate. Unlike traditional bipolar transistors, MOSFETs require no gate current to turn on; the control gate is responsible for allowing the current to flow from the source to the drain. To turn the MOSFETs off, the voltage at the gate must be taken to 0 volts.
The BSS8402DW-7 utilizes its four N-channel MOSFETs to transfer signals or to act as a logic interface with the help of its four dedicated control inputs. When the power is on, the MOSFETs are off, preventing any current flowing from the source to the drain. When the control input voltage is applied to the logic gate, the MOSFET turns on, allowing current to flow from the source to the drain. With the application of 0 volts to the control input, the MOSFET will turn off, preventing any current flow.
The BSS8402DW-7 is an ideal choice for high speed switching and interfacing applications. It offers low power operation as well as a variety of package sizes. Its high switching speed, reliable operation, and ESD protection make it perfect for a wide range of applications. It is suitable for use in a variety of portable and stationary devices, including computers, communication systems, audio equipment, and other consumer products.
The specific data is subject to PDF, and the above content is for reference
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