BSS84DW-7

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The BSS84DW-7 is an N-channel enhancement mode field effect transistor array. This discreet device is an advantageous substitute for the standard PNP bipolar transistor. The BSS84DW-7 operates with low drain-source on-resistance and low input capacitance, making it a superior choice for use in signal processing applications. In particular, BSS84DW-7 is well suited for high switching speed applications that must also have low power dissipation. The BSS84DW-7 is composed of four N-channel MOSFETs opened in parallel. This configuration creates a low on-resistance device with improved current capability, low thermal resistance, and fast switching times making it an ideal solution for numerous applications. The array structure of this transistor also allows for the inductive switching element to be external from the device, which prevents the build-up of inter-device capacitance. This externally-mounted element ensures that the component exhibits exceptionally low levels of cross-talk and electrical noise when in operation.The BSS84DW-7’s main application area is in signal processing and high-frequency switching circuits. Its extremely low-on resistance makes it an efficient component for use in Class-D audio amplifiers, DC-DC converters, logic level converters and other power circuits requiring the output stage to be continuously driven. Its array configuration and low capacitance make it well suited for the demanding fast-response environments of communications and automotive electronics, where low loss and fast response times are paramount. In terms of working principle, the BSS84DW-7 operates on the four N-channel MOSFETs arranged in a parallel array. When the drain-source voltage, VGS, is applied, an electric field is created which, depending on the polarity, either increases or decreases the channel conductance. Any additional variations from this control voltage will cause a corresponding variation in the current. This ability to control the current, representing the ability to amplify signals, has established field effect transistors as the central components of many modern electronic devices.The BSS84DW-7 is a high performance alternative to conventional transistors, particularly in switching and power conversion applications, offering low on-resistance and low input capacitance. As it is composed of four N-channel MOSFETs arranged in a parallel array, it allows for high current handling while also exhibiting fast switching times, low thermal resistance and low levels of electrical noise. Furthermore, this transistor array offers the advantage of low cross-talk and excellent inductive behavior, making it ideal for numerous applications.

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