Allicdata Part #: | 1727-2931-2-ND |
Manufacturer Part#: |
BSS84,215 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 50V 130MA SOT-23 |
More Detail: | P-Channel 50V 130mA (Ta) 250mW (Tc) Surface Mount ... |
DataSheet: | BSS84,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04709 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 130mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Tc) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS84,215 is a high voltage P-Channel MOSFET device designed to withstand up to +/-30V. This makes it especially suitable for applications with high side switching, such as motor control or low side switching, where it can switch up to 24V.
Application Field
The BSS84,215 is mainly used in automotive electronics and industrial applications. In automotive electronics, the device is used in automatic door locks, the power windows, and the sunroof. It is also used in Throttle Control Units (TCU) and automatic climate control systems. Industrial applications include Solid State Relay (SSR) controllers, high voltage switching circuits, and power circuit breakers.
Working Principle
The BSS84,215 is a high voltage P-Channel MOSFET device. Its working principle is based on the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which uses a source, gate and drain to act as a switch. When current flows through the source and gate, it is drawn to the drain, allowing current to flow through the device. The resistance of the device is determined by the voltage applied between the key components and this is what can be used to control the amount of current running through the device.
The characteristics of the MOSFET are affected by the amount of gate-source voltage and drain-source voltage applied. The BSS84,215 is designed to withstand up to +/-30V and has an on-resistance (RDS) of 28 mOhm, making it very suitable for high voltage applications. With high side switching, the device can switch up to 24V and have a low side RDS of 8.7 mΩ.
The BSS84,215 is also capable of handling large loads, with a maximum continuous Drain-Source current (ID) of 1.5A and pulsed Drain-Source current up to 5.5A. It also has a high drain-source breakdown voltage (BVDSS) of 30V, making it suitable for applications that require higher voltages.
In addition to its excellent electrical characteristics, the BSS84,215 also has a thermal resistance of 1.45°C/Inch². This gives it good thermal protection, allowing it to handle high temperature environments while maintaining a safe operating temperature.
Conclusion
The BSS84,215 is a high voltage P-Channel MOSFET device designed to withstand up to +/-30V. It is ideal for applications that require high side switching, such as motor control or low side switching. It has excellent electrical characteristics, such as an on-resistance of 28mΩ and a drain-source breakdown voltage of 30V. In addition, it also has a thermal resistance of 1.45°C/Inch², making it suitable for high temperature applications.
The specific data is subject to PDF, and the above content is for reference
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