BSS84PH6327XTSA2 Discrete Semiconductor Products |
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| Allicdata Part #: | BSS84PH6327XTSA2TR-ND |
| Manufacturer Part#: |
BSS84PH6327XTSA2 |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 60V 170MA SOT-23 |
| More Detail: | P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount ... |
| DataSheet: | BSS84PH6327XTSA2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.05000 |
| 10 +: | $ 0.04850 |
| 100 +: | $ 0.04750 |
| 1000 +: | $ 0.04650 |
| 10000 +: | $ 0.04500 |
| Vgs(th) (Max) @ Id: | 2V @ 20µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 360mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 19pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 170mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BS-S84PH6327XTSA2 is a single N-Channel, General-Purpose Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) designed for modern digital electronics. This transistor plays an important role in logic transitions and power management applications.
The BS-S84PH6327XTSA2 has two distinct terminals, the drain and the source. The drain terminal is built as a drain plate with its metal contact area exposed and the source terminal is connected to the transistor body. This configuration allows the charge carriers (electrons and holes) to move freely between the two terminations, in a process of alternating current (AC) generation.
In operation, the BS-S84PH6327XTSA2 works by controlling the flow of current between the source and the drain. When a voltage is applied to the drain but not to the source the current will flow freely between the two terminals. However, when a reverse voltage is applied to the source and the drain, the transistor body forms a p–n junction which stops the current from flowing in the desired direction. This is a fundamental characteristic of the MOSFET. Additionally, the gate terminal of the MOSFET can be used to control the current flowing between the source and the drain. By applying a voltage to the gate terminal, the amount of current flowing between the source and drain can be adjusted.
Given its flexibility, the BS-S84PH6327XTSA2 is suitable for a wide range of applications. It is widely used in power management circuits and digital logic circuits. For example, in power management circuits, the BS-S84PH6327XTSA2 can help regulate the amount of power flowing between two devices. Additionally, in digital logic circuits, the BS-S84PH6327XTSA2 can be used to generate logic signals, by controlling the current flow between two devices.
Other applications for the BS-S84PH6327XTSA2 include switching, pulse generation, pulse width modulation, and other custom circuits. Owing to its versatility and ease of use, theBS-S84PH6327XTSA2 is a popular choice for power management and digital logic applications.
To summarize, the BS-S84PH6327XTSA2 is a single N-Channel MOSFET specifically designed for power management applications. It is used in a wide range of digital logic and power management circuits. The BS-S84PH6327XTSA2 works by controlling the current flow between the source and drain terminal with an applied voltage to the gate terminal. This makes it suitable for a variety of applications such as switching, pulse generation, pulse width modulation, and other custom circuits.
The specific data is subject to PDF, and the above content is for reference
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BSS84PH6327XTSA2 Datasheet/PDF