Allicdata Part #: | BSS87L6327HTSA1TR-ND |
Manufacturer Part#: |
BSS87L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 240V 260MA SOT-89 |
More Detail: | N-Channel 240V 260mA (Ta) 1W (Ta) Surface Mount PG... |
DataSheet: | BSS87L6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 240V |
Current - Continuous Drain (Id) @ 25°C: | 260mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 260mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 108µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 97pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT89 |
Package / Case: | TO-243AA |
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The BSS87L6327HTSA1 is a single-channel MOSFET integrated circuit (IC) that is widely used in a variety of fields. It is a high-temperature, low barrier MOSFET with a high drain-source breakdown voltage and superior thermal performance that allows for robust application in a variety of environments.
This particular MOSFET is suitable for use in high temperature, low voltage automotive and industrial applications. It features an extended operating temperature range of -65°C to +150°C and can stand up to extreme temperatures. It is also an excellent choice for applications that require excellent noise performance or very low power consumption.
The BSS87L6327HTSA1 is widely used in automotive electronics, including engine control units, transmission control units, and air conditioning control units. It is also used in civil, industrial, and military applications, such as computer peripherals, battery chargers, and power supplies.
The device is enclosed in a SOP-8 package and consists of four terminals: drain, source, gate, and gate substrate. The drain and source pins are the main output pins. The gate and gate substrate pins are the control inputs. The device is designed to operate without a gate-source voltage applied, allowing direct analog operation.
The BSS87L6327HTSA1 is a n-type MOSFET that uses a field effect transistor (FET) process to control the current flow between source and drain. The operation works by applying a voltage to the gate terminal, which in turn produces an electric field between the gate and drain. When a voltage is applied to the gate, electrons from the gate are attracted by the electric field and move to the drain terminal. This creates an inversion layer between the source and drain terminals, which allow current to flow, thus controlling current flow between the two terminals.
The BSS87L6327HTSA1 is a versatile and reliable component that is used to great effect in a variety of automotive, industrial, civil, and military applications. Its extended temperature range and superior thermal performance make it an excellent choice for these demanding applications.
The specific data is subject to PDF, and the above content is for reference
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