BSS84LT1G Discrete Semiconductor Products |
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Allicdata Part #: | BSS84LT1GOSTR-ND |
Manufacturer Part#: |
BSS84LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 130MA SOT-23 |
More Detail: | P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount ... |
DataSheet: | BSS84LT1G Datasheet/PDF |
Quantity: | 42000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 5V |
FET Feature: | -- |
Power Dissipation (Max): | 225mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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FETs or Field effect transistors are the preferred semiconductor device for amplifying, switching, and reducing electrical noise. The type of FET used in most applications is the Metal Oxide Semiconductor FET (MOSFET). The BSS84LT1G is a single MOSFET that has been designed to offer improved performance. This article will explore the application fields and working principle of the BSS84LT1G.
Application Fields
The BSS84LT1G is a MOSFET that has been optimized for high voltage operation, which makes it ideal for applications such as switching power supply, DC-DC converter, load switch, gate drive, etc. It is also ideal for applications requiring low on-resistance, such as overload protection and snubber circuits. The BSS84LT1G is also suitable for battery management in automotive applications.
Features
The BSS84LT1G is a single n-channel enhancement MOSFET. It has a breakdown voltage of 40V, RDS(on) of 3.4mΩ, and a total gate charge of 33nC. It also has a low on-state resistance, which helps to reduce power consumption. The device also has a fast switching speed, and is capable of handling high current and voltage without failure. In addition, it has a low input capacitance and is resistant to thermal and electrical stress.
Working Principle
A MOSFET is a type of field effect transistor (FET). It features a three-terminal structure, consisting of a source, drain, and gate. When a voltage is applied to the gate, it modulates the electric field between the source and drain and results in either an increase or a decrease in the flow of current. The BSS84LT1G works on the same principle, but is optimized for high voltage operation. When the voltage applied to the gate is high enough, the gate current is high enough to allow electrons to flow from the source to the drain, thus allowing a current to flow.
Conclusion
The BSS84LT1G is a single n-channel enhancement MOSFET designed for high voltage operation. It is suitable for applications such as switching power supplies, DC-DC converters, load switches, gate drives, and overload protection circuits. It has a breakdown voltage of 40V, RDS(on) of 3.4mΩ, and a total gate charge of 33nC. Additionally, it has a fast switching speed and is resistant to thermal and electrical stress. The BSS84LT1G MOSFET works on the principle of modulating the electric field between the source and drain to allow a current flow.
The specific data is subject to PDF, and the above content is for reference
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