BSS84W-7

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BSS84W-7 Application Field and Working Principle

BSS84W-7 is a single Enhancement-mode Field Effect Transistor (FET) designed for high-speed switching applications. It is fabricated using advanced technology for improved performance. This device is mainly used in general-purpose switching applications such as high-performance motor control, power supplies, battery chargers, RF amplifiers, switching converters and high-frequency driver stages. It can also be used to design integrated circuits and replace bipolar transistors in many applications.

Package Type

BSS84W-7 is available in two package configurations: TO-220 and SOT-223. Both packages offer high power density and superior switching performance. The TO-220 package is constructed of a low thermal resistance material, making it suitable for high-temperature applications. The SOT-223 package is a hermetically sealed package that offers excellent thermal characteristics.

Applications

BSS84W-7 is ideal for applications, including:

• Motor control
• Switching power supplies
• Battery chargers
• DC-DC converters
• High-frequency driver stages
• Power circuits
• RF amplifiers
• Integrated circuits

Features and Benefits of BSS84W-7

BSS84W-7 offers a variety of features and benefits that make it ideal for use in a wide range of applications, including:

• Low on resistance
• High-speed switching
• Very low gate-drain capacitance
• Very low gate threshold voltage
• Improved stability under high temperature
• Free from latch-up
• Low parasitic capacitance
• Excellent thermal characteristics

Working Principle

The working principle of the BSS84W-7 involves the use of a gate voltage to control the flow of current through the drain and source terminals. The device operates in the Enhancement-mode and is constructed from an N-channel silicon substrate, a source terminal and a drain terminal. The source and drain terminals form the source-drain channel, in which the current flows when a potential difference is applied between the drain and source. The gate terminal is used to control the current flow through the channel. When a gate voltage is applied between the gate and source terminals, it creates an electric field in the region between the gate and the channel, which modifies the conductivity of the channel and controls the current flow through it. Increasing the gate voltage increases the amount of current that can flow through the channel, while decreasing the gate voltage decreases the amount of current that can flow through the channel.

Conclusion

BSS84W-7 is a single Enhancement-mode FET designed for high-speed switching applications. It features very low on resistance and gate threshold voltage, and offers excellent thermal characteristics in its TO-220 and SOT-223 package configurations. This device is well suited for general-purpose switching applications such as motor control, high-frequency driver stages, RF amplifiers and power supplies.

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