Allicdata Part #: | BSS806NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSS806NH6327XTSA1 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 2.3A SOT23 |
More Detail: | N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | BSS806NH6327XTSA1 Datasheet/PDF |
Quantity: | 18000 |
3000 +: | $ 0.06195 |
Vgs(th) (Max) @ Id: | 750mV @ 11µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 529pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 2.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 2.3A, 2.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 2.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS806NH6327XTSA1 is a type of transistor, more specifically, a field-effect transistor (FET). FETs are transistors that use an electric field to control the electrical behavior of the device. BSS806NH6327XTSA1 is a type of FET known as a metal oxide-semiconductor field-effect transistor (MOSFET) and is specifically a single type. In this context, single-type indicates that it is a three-terminal device with a source, a drain and a gate.
The BSS806NH6327XTSA1 is used in a variety of applications where two or more components need to be electrically connected. Some of the most common applications are in electronic power control and in high-speed data communication. It can also be used as an amplifier and can be used in analog and digital circuits.
In regards to the working principle of the BSS806NH6327XTSA1, it primarily involves the control of current flow through the transistor via the application of an electric field. The transistor has a source terminal which supplies current to the device, and a drain terminal which receives the current. The electric field that is applied to the gate terminal determines the flow of current through the device. Since the gate terminal is electrically insulated from the source and the drain, the electric field is the only factor controlling the current flow.
The BSS806NH6327XTSA1 is an enhancement-mode transistor, meaning that it requires the application of a positive gate-source voltage to turn on the device. When a voltage is applied to the gate and the source, an electric charge is induced in the gate region which in turn increases the conductivity of the channel between the source and the drain, thereby allowing current to flow through the device. When the gate-source voltage is removed, the device returns to the non-conducting state.
The BSS806NH6327XTSA1 can be used as a switch to selectively turn current on or off, depending on the voltage applied to the gate terminal. It also makes an ideal switch for pulse-width modulated devices, as it can quickly switch between the on and off states. This transistor is also useful in radio-frequency (RF) applications, since it can switch quickly without generating any noise.
Overall, the BSS806NH6327XTSA1 is a versatile, reliable, and efficient transistor that is used for a wide range of applications. It is an enhancement-mode MOSFET and can be used as a switch or amplifier, as well as for pulse-width modulation and radio-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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