BSS84LT1 Discrete Semiconductor Products |
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Allicdata Part #: | BSS84LT1OSCT-ND |
Manufacturer Part#: |
BSS84LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 130MA SOT-23 |
More Detail: | P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount ... |
DataSheet: | BSS84LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 5V |
FET Feature: | -- |
Power Dissipation (Max): | 225mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS84LT1 (also known as a medium-voltage junction field-effect transistor) is a type of metal-oxide semiconductor field-effect transistor (MOSFET) used to control power in applications that require medium voltage control. It is ideal for use in automotive, industrial and consumer electronic applications. This device is capable of operating up to 63 V and is built in an 8-pin dual inline package.
The BSS84LT1 is a single-gate MOSFET featuring low on-resistance and low threshold voltage. The device offers excellent ESD protection and is designed to provide accurate gate-to-source voltage control. It features a large drain-source breakdown voltage and a low gate-charge for improved system efficiency.
The transistor is capable of handling currents up to 20mA and voltages up to 63V. It is designed to operate at a temperature range of -40°C to +150°C, making it suitable for use in a variety of environments and applications. Due to its impressive thermal characteristics, the device is well suited for high-current switching applications.
The operation of the BSS84LT1 is based on the basic principles of MOSFET transistors. It is constructed by joining three terminals together: the source, the drain, and the gate. The voltage applied to the gate affects the conductivity of the channel and thus controls the device’s output. The source terminal is where the current enters the device while the drain terminal is where the current exits. The MOSFET is turned on when a voltage is applied between the gate and the source. This opens up a channel between the drain and the source, allowing current to flow through.
The BSS84LT1 is most commonly used in industrial, consumer, and automotive applications needing to control high power levels. It is primarily used in power switching applications such as DC/DC converters, regulator controllers, and MOSFET relays. It is also used for the protection of semiconductor devices that require higher voltage and current ratings.
The BSS84LT1 is an ideal solution for applications that require accurate voltage control and low power consumption. It is capable of providing accurate gate-to-source voltage control and low on-resistance. The device operates over a wide temperature range, making it suitable for use in a wide range of environments. It offers excellent ESD protection and can be used in both commercial and automotive applications.
In conclusion, the BSS84LT1 is a reliable MOSFET that is easy to use and is suitable for a variety of applications. It is known for its low on-resistance, superior ESD protection and excellent thermal characteristics. Additionally, it is highly accurate, allowing for precise voltage control. These features make the BSS84LT1 a valued solution for applications requiring medium voltage control.
The specific data is subject to PDF, and the above content is for reference
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