BSS84-7 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	45pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	10 Ohm @ 100mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	130mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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Introduction:BSS84-7 is a type of field effect transistor (FET), also classified under single metal-oxide semiconductor FET (MOSFET). This type of transistor primarily uses metal-oxide semiconductor technology alongside a field-effect gate structure. This enable a MOSFET to amplify signals of high frequency that are encountered in radio frequency (RF) applications. Therefore, BSS84-7 is commonly used in radio frequency applications and other high-speed communication systems, due to their small footprint and high levels of performance.General structure:BSS84-7 employs advanced metal–oxide–semiconductor (MOS) technology and features an insulated gate field-effect structure. In this type of transistor, the semiconductor, typically comprised of silicon dioxide, works in conjunction with an insulated gate. This allows the transistor to regulate the flow of electrical current, when voltage is applied to the gate. Atop the source and drain contacts, the channel length is designed for maximum frequency carrier motion and has a very short length of less than 1μm. Performance characteristics:BSS84-7 transistors employ metal-oxide technology and are known for their excellent transistor performance. This allows them to deliver higher levels of precision, speed and reliability. The device’s very short channel length of less than 1μm allows for fast switching times and substantial speed gains. Other performance characteristics of the device include a breakdown voltage of 36V, a dielectric strength of 80V, and a maximum drain current rating of 18A. Advantages of using BSS84-7: BSS84-7 is a very popular choice of transistor due to its high levels of performance and reliability. The device is particularly favoured in countries with stringent environmental level requirements, where it delivers superior results compared to standard transistors. The device’s very short channel length of less than 1µm offers considerable speed gains and ensures faster switching times. Furthermore, the transistor is able to operate with very low levels of power consumption and is significantly more efficient than other types of transistors. Lastly, the transistor’s small physical footprint makes it ideal for areas where space is limited, such as in mobile and embedded applications.Typical application fields:BSS84-7 transistors are suitable for use in many high frequency, high-speed communication systems. The device is particularly popular in radio frequency (RF) applications, such as smartphones, microwave ovens, and satellite communications systems. Its excellent performance characteristics, coupled with its small footprint, makes it an ideal choice for use in areas where space is limited or weight is a major consideration. Additionally, it is also highly suited for use in applications such as wireless local area networks (WLANs) and other mobile communications systems.Conclusion:BSS84-7 is an advanced type of single metal-oxide semiconductor field-effect transistor. This device is capable of performing to the highest possible standards, and is particularly well suited to high frequency and high-speed communication applications. Moreover, the transistor’s very short channel length of less than 1µm allows for fast switching times and superior levels of performance compared to standard transistors. Lastly, the device’s compact physical size makes it ideal for use in applications where space is limited or weight is a major consideration.

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