Allicdata Part #: | BSS84TR-ND |
Manufacturer Part#: |
BSS84 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 130MA SOT-23 |
More Detail: | P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS84 Datasheet/PDF |
Quantity: | 50000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 73pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSS84 is a kind of low voltage enhancement mode P-channel MOSFETs which were specifically developed for GSM/DCS handset applications and it has become very popular in the commercial mobile phone markets. BSS84 MOSFETs are designed with a high output impedance, low input capacitance, low on resistance, low capacitance and low cost.
The gate-source voltage (Vgs) of the BSS84 MOSFET is very important in its application field, which can be considered as an indication of how much current the device is able to supply. The gate voltage is mainly determined by the kind of application it is running for and the load conditions. BSS84 MOSFETs will operate at Vgs of 4.5 V and at Vgs of 5.5 V.
The working principle of BSS84 MOSFETs is also quite simple. They are basically a switch that closes when a certain voltage is applied to the gate of the MOSFET, allowing a current to flow between the drain and the source. The gain of the device is determined by the ratio of the drain current to the gate current and the higher the ratio, the higher the gain of the device. So the input voltage applied to the source will determine the output current between the drain and the source.
Another important characteristic of the BSS84 is its low on-resistance. This means that the device has very low voltage drop across it and therefore can operate at higher efficiency than other types of devices. This also enables the device to operate at higher switching speeds and reduce power dissipation.
The other important characteristic of the BSS84 is its low input capacitance. This means that the device has minimal capacitive loading and therefore operates at lower frequencies without the need for external capacitors. This also reduces the power dissipation and increases the device\'s efficiency.
The BSS84 is a very important MOSFET for its applications in a variety of fields. It has a low on-resistance, low input capacitance, high frequency operation and low voltage drop, making it ideal for GSM and DCS handset applications. Additionally, its low cost and low power dissipation makes it a popular choice for different types of designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BSS84AKT,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET P-CH 50V SC-75P-Ch... |
BSS84TA | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET P-CH 50V 0.13A SOT... |
BSS87E6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS84P E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS87 E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS84-7 | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84W-7 | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SC7... |
BSS84P-E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS87E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS83PE6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 330MA SOT... |
BSS84LT1 | ON Semicondu... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS83PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 330MA SOT... |
BSS806NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.3A SOT2... |
BSS816NW L6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.4A SOT3... |
BSS84PH6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 0.17A SOT... |
BSS84AK-BR | Nexperia USA... | 0.0 $ | 1000 | MOSFET P-CH 50V 180MA TO2... |
BSS84AKW-BX | Nexperia USA... | 0.0 $ | 1000 | MOSFET P-CHANNEL 50V 150M... |
BSS84AK,215 | Nexperia USA... | 0.06 $ | 1000 | MOSFET P-CH 50V TO-236ABP... |
BSS84,215 | Nexperia USA... | 0.05 $ | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS87,115 | Nexperia USA... | 0.14 $ | 1000 | MOSFET N-CH 200V 400MA SO... |
BSS84AKVL | Nexperia USA... | 0.03 $ | 1000 | MOSFET P-CH 50V 180MA TO2... |
BSS816NWH6327XTSA1 | Infineon Tec... | 0.06 $ | 1000 | MOSFET N-CH 20V 1.4A SOT3... |
BSS87H6327FTSA1 | Infineon Tec... | 0.14 $ | 2000 | MOSFET N-CH 240V 260MA SO... |
BSS84-7-F | Diodes Incor... | -- | 1000 | MOSFET P-CH 50V 130MA SOT... |
BSS84PH6433XTMA1 | Infineon Tec... | 0.04 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84 | ON Semicondu... | -- | 50000 | MOSFET P-CH 50V 130MA SOT... |
BSS84PH6327XTSA2 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84LT1G | ON Semicondu... | -- | 42000 | MOSFET P-CH 50V 130MA SOT... |
BSS83PH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET P-CH 60V 0.33A SOT... |
BSS84AKS/ZLX | Nexperia USA... | 0.0 $ | 1000 | MOSFET 2 P-CH 50V 160MA 6... |
BSS84PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 170MA SOT... |
BSS84PW | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 150MA SOT... |
BSS87L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 260MA SO... |
BSS84DW-7 | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2P-CH 50V 0.13A SC... |
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