Allicdata Part #: | 568-10473-2-ND |
Manufacturer Part#: |
BSS84AKT,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET P-CH 50V SC-75 |
More Detail: | P-Channel 50V 150mA (Ta) 250mW (Ta), 770mW (Tc) Su... |
DataSheet: | BSS84AKT,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.35nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 36pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Ta), 770mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-75 |
Package / Case: | SC-75, SOT-416 |
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This article discusses the features, applications, and working principles of BSS84AKT-115, a type of field effect transistor (FET). FETs are a family of solid-state semiconductor devices having three terminals, including gate, source and drain. Among FETs, the Metal Oxide Semiconductor FET (MOSFET) is a type of single-gate transistor. It is a three-terminal active element with a high resistance between its drain and source and a low resistance between the gate and source. The BSS84AKT-115 is a high-performance and low leakage MOSFET with enhancements for improved dynamic characteristics and improved power efficiency.
The most salient feature of BSS84AKT-115 is its very low input capacitance and low power consumption. Its input capacitance is just 6 pF and its operating range is from -500V to -2200V. This makes it ideal for applications that require high power efficiency and low power consumption. Additionally, its on-state resistance is typically only 0.8 ohms. This combination of low power consumption and low on-state resistance make it suitable for a wide range of applications.
The BSS84AKT-115 can be used in a variety of applications, such as audio amplifiers, automotive systems, medical electronics, etc. It is especially suitable for use in high-voltage applications where its low power consumption, low input capacitance, and low on-state resistance are beneficial. Furthermore, its low distortion, high frequency response, and wide operating temperature range make it a great choice for audio applications.
The working principle of BSS84AKT-115 is based on the MOSFET technology. The MOSFET works by applying a control signal to the gate. This causes a change in the electric field between the drain and source, which in turn affects the flow of current between source and drain. When a voltage is applied to the gate, a current starts flowing, resulting in an amplification of the input signal. In other words, the MOSFET works as an amplifier, increasing the magnitude of the input signal. As the current increases, the voltage between the drain and the source drops, allowing more current to flow.
The BSS84AKT-115 is an excellent choice for applications requiring a high-performance, low-power transistor. With its low input capacitance, low on-state resistance, and wide operating temperature range, it is suitable for a variety of applications, including audio amplifiers, automotive systems, medical electronics, etc.
The specific data is subject to PDF, and the above content is for reference
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