BSS8402DWQ-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V, 50V
Current - Continuous Drain (Id) @ 25°C:	115mA, 130mA
Rds On (Max) @ Id, Vgs:	13.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
Power - Max:	200mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

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What is BSS8402DWQ-7?

BSS8402DWQ-7 is an array of Vertical Double-diffused Metal Oxide Semiconductor Field-Effect Transistors (DMOSFETs). The device is a discrete semiconductor package containing multiple devices that functions as an integrated circuit. The part number specifies each device type.

BSS8402DWQ-7 Application Field

DMOSFETs, in general, have widespread applications in power electronic circuits, power supplies, voltage regulators, switching converters, and automotive electronics. The BSS8402DWQ-7 is ideal for those applications with high input power levels and low on-resistance, making it a suitable choice for a variety of power applications. The device also provides low noise and excellent EMI control. Some example application fields include notebook power supply control, low/medium power DC-DC converters, motor controllers, electric vehicle power systems, and power conditioning systems.

Working Principle

A DMOSFET is an insulated gate field-effect transistor (IGFET) that uses a metal–oxide–semiconductor (MOS) structure as its active region. When the gate is positively biased, the conductivity of the channel is enhanced, allowing current to flow. DMOSFETs, compared to other field-effect transistors, are ideal for power applications, since they can handle more power with a lower device resistance. As a vertical device, the gate can be controlled independently of the source and drain, making the gain and current flow of the device easier to control. The BSS8402DWQ-7 uses a TRENCHSTOP process to ensure high switching speeds and low on-resistance. This process entails the use of small trenches at the drain and source regions, which reduce the distance between source and drain regions and thus reduce device on-resistance. The device also features a logic-level input, meaning that it can be driven from a TTL logic signal. This makes it an ideal choice for applications where both high power and low noise are desired.

Conclusion

The BSS8402DWQ-7 is an array of DMOSFETs that provides excellent switching capabilities and low on-resistance. The part is ideal for power electronics applications with low to medium voltage and power levels, as it has a logic-level input and features TRENCHSTOP technology for increasedelectrical performance. With its range of features, the BSS8402DWQ-7 is a great choice for a variety of power applications.

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