BSS87 E6433

Vgs(th) (Max) @ Id:	1.8V @ 108µA
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	97pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.5nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	6 Ohm @ 260mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drain to Source Voltage (Vdss):	240V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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IntroductionBSS87 E6433 is a high-performance, insulated-gate field-effect transistor (IGFET) designed for high-density, high-efficiency applications. It has a peak drain voltage of up to 70V and a current rating of up to 20A. It is an advanced, economical and reliable solution for applications requiring high power density and low power dissipation.The BSS87 E6433 is a single technology available for applications that require a broad range of operating conditions. It offers excellent performance in a wide range of operating conditions and application environments.Application FieldThe BSS 87 E6433 can be used in various commercial and industrial applications requiring high power density and efficiency. It has been widely used in applications such as lighting, temperature control, power switching, motor control, and audio power amplification.In addition, the BSS87 E6433 has been successfully applied to other high-efficiency applications such as data communications, instrumentation, power control, automotive and military applications.The BSS87 E6433 has been designed to meet the demanding requirements of high-speed, high-power applications. Its highly reliable and robust design makes it suitable for a wide range of harsh environments. It is also compatible with popular power line and communications standards.Working PrincipleThe BSS87 E6433 is an insulated-gate field-effect transistor (IGFET). It uses a gate-source voltage to control the current through the transistor. The voltage applied to the gate drives the transistor into two distinct modes: enhancement and depletion.In enhancement mode, the gate-source voltage is positive, causing the transistor to conduct current between the source and drain terminals. The higher the voltage applied to the gate, the more current is conducted between the source and drain terminals.In depletion mode, the gate-source voltage is negative, causing the transistor to act as an insulator, preventing current from flowing between the source and drain terminals. The more negative the voltage applied to the gate, the less current is conducted between the source and drain terminals.ConclusionThe BSS87 E6433 is a highly reliable and robust solution for applications requiring high power density and efficiency. It offers excellent performance in a wide range of operating conditions and applications. Its highly efficient design makes it suitable for harsh environments, and its compatibility with existing standards makes it ideal for many different applications.

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