BSS84TA Discrete Semiconductor Products |
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Allicdata Part #: | BSS84ZXTR-ND |
Manufacturer Part#: |
BSS84TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 50V 130MA SOT23-3 |
More Detail: | P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS84TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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```A BSS84TA is an enhancement-mode N-channel MOSFET transistor produced by Philips Semiconductor. It belongs to a variety of enhancement-mode MOSFETs produced by Philips, such as the P-Channel BH1830V7, the N-Channel BH1830F5, and the N-Channel BH950V7.
The BSS84TA has many applications, and its primary use is for switching and amplifier applications. It can be used to control current, switch circuits on and off, and create analog amplifying signals. It is suitable for most low voltage amplifier and switch applications.
The BSS84TA works on the principle of field-effect transistors (FETs). FETs are a type of transistor that utilizes an electric field to control the flow of current within the device. FETs have three terminals that control and influence the current flow. The source terminal serves as the output, the drain terminal controls the current flow, and the gate terminal controls the voltage that determines how much current is allowed to flow.
The BSS84TA is a three-terminal device, with the source, drain and gate terminals. The source terminal and the drain terminal are both connected to the FET, and the gate terminal is isolated from the FET. When a positive voltage is applied to the gate terminal, electrons will be attracted to the gate. This then causes the current to flow from the source to the drain, as the electrons are attracted to the positive voltage. A negative voltage will cause the current to be lowered or blocked, depending on the size of the voltage applied.
The BSS84TA also has some important parameters and specifications. The maximum voltage applied to the source and drain terminals is 40 volts, and it can handle a maximum power dissipation of 500 mWatts. The maximum current carrying capacity of the BSS84TA is 0.5 Amperes, and the maximum voltage drop is 0.7 volts
The BSS84TA is available in a variety of package types, and it can be used in a variety of different applications. It is an ideal choice for low voltage amplifier and switch applications, and for general purpose digital circuit switching. It can also be used in power related applications, as it has a high current carrying capacity. It is also suitable for use in battery-powered applications, as it has a low power dissipation.
In conclusion, the BSS84TA is an enhancement-mode N-channel MOSFET transistor produced by Philips Semiconductor. It is suitable for most low voltage amplifier and switch applications, and it has a variety of uses. The BSS84TA works on the principle of FETs, and has a source, drain and gate terminal. It has a maximum voltage applied of 40 volts, a maximum current carrying capacity of 0.5 Amperes, and a maximum power dissipation of 500 mWatts. The BSS84TA is available in a variety of package types, and is suitable for use in a variety of applications, such as low voltage amplifier and switch applications, general purpose digital circuit switching, and power related applications.
```The specific data is subject to PDF, and the above content is for reference
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