BSS84PL6327HTSA1 Allicdata Electronics

BSS84PL6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BSS84PL6327HTSA1TR-ND

Manufacturer Part#:

BSS84PL6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 60V 170MA SOT-23
More Detail: P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount ...
DataSheet: BSS84PL6327HTSA1 datasheetBSS84PL6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SIPMOS®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
FET Feature: --
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) are one of the most widely used types of transistors in today\'s electronics. Their structure consists of 3 terminals: Source, Gate, and Drain. The BSS84PL6327HTSA1 is a MOSFET transistor specifically designed for a wide range of applications, such as amplified switching, Class D switching, and power management.

The application field of the BSS84PL6327HTSA1 is diverse, ranging from motor control, audio and video control, consumer appliances, automotive electronics and much more. It can be used for lighting, general DC/DC switching, regulator switching, and industrial process control, as well as memory and gates in logic circuits. In addition, it is effective in high frequency AC circuit switching, and works better than bipolar transistors, since it does not suffer from thermal stability issues such as thermal runaway.

The BSS84PL6327HTSA1 MOSFET features low RDS(ON) (drain-source on-resistance) and high voltage breakdown, allowing it to efficiently operate under extreme conditions. It also has a very low gate charge, allowing it to switch with low power dissipation. Furthermore, it has a high level of efficiency, making it suitable for high current, high power applications.

The working principle of the BSS84PL6327HTSA1 is based on the fact that MOSFETs use an electric field to control their conductivity between the Source and Drain. By applying a voltage to the Gate, a conductive channel can be formed between the Source and Drain. This allows current to flow between them, with the amount of current controlled by the voltage applied to the Gate.

The BSS84PL6327HTSA1 MOSFET is an ideal choice for applications requiring high efficiency and low power consumption. Its wide range of application fields, from automotive electronics to industrial process control, and its efficiencies make it an ideal choice for any engineering applications.

The specific data is subject to PDF, and the above content is for reference

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