BSS83PL6327HTSA1 Discrete Semiconductor Products

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BSS83PL6327HTSA1 is a field-effect transistor (FET) with a single gate. It is a type of transistor that utilizes an electric field to control the electrical conductivity. FETs are generally separated into two categories: junction and insulated gate. Commonly used FETs include junction FETs, metal-oxide-semiconductor FETs (MOSFETs), and metal-insulator-semiconductor FETs (MISFETs).The BSS83PL6327HTSA1 uses insulated gate technology and is specifically a MOSFET. This type of FET is constructed of a semiconductor material in which the majority of the electric current is controlled by a “gate” voltage applied to its surface. When the gate is charged with a positive voltage, it creates an electrostatic attraction which pulls electrons from sources both near and far.

The BSS83PL6327HTSA1 is designed to work with an input voltage between 12 and 24 volts DC, a low output voltage of 2.5 volts, and a high output voltage of 15 volts. Its maximum drain current is typically 130mA, with a minimum source current of 3.2mA. Its maximum power dissipation is 250mW, and its drain-source breakdown voltage is approximately 14V. The device’s gate-source voltage is typically -3V.

The BSS83PL6327HTSA1 has a number of different applications. It is most commonly used in power electronics circuits, such as switching circuits, DC-DC converters, and voltage regulation circuits. It is also used in digital logic circuits, as a gate-driving device for other MOSFETs. Additionally, it may be used as a level shifter or buffer in motor control applications.

The BSS83PL6327HTSA1 utilizes a two-terminal MOSFET technology. As a result, its working principle is relatively simple. When a gate voltage is applied to it, current is allowed to flow through the device from the source side to the drain side. This current flow is then determined by the gate voltage and the amount of current flowing through the device at that time. The more current that flows, the higher the drain voltage is and the higher the level of current that the device can output.

In conclusion, the BSS83PL6327HTSA1 is a single-gate MOSFET that has a wide range of uses in both power electronic and digital logic circuits. Its working principle is based on a two-terminal technology which allows for current to flow between the device’s source side and drain side. As a result, is capable of producing both a low output voltage and a high output voltage which can be used in a variety of different applications.

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